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dc.contributor.authorValle Fraga, Juan José
dc.contributor.authorFernández Martínez, Daniel
dc.contributor.authorMadrenas Boadas, Jordi
dc.contributor.authorBarrachina, Laura
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2018-03-19T14:40:28Z
dc.date.available2018-03-19T14:40:28Z
dc.date.issued2017-08-01
dc.identifier.citationValle, J.J., Méndez Fernández, Daniel, Madrenas, J., Barrachina, L. Curvature of BEOL cantilevers in CMOS-MEMS processes. "Journal of microelectromechanical systems", 1 Agost 2017, vol. 26, núm. 4, p. 895-909.
dc.identifier.issn1057-7157
dc.identifier.urihttp://hdl.handle.net/2117/115412
dc.description© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
dc.description.abstractThis paper presents the curvature characterization results of released back-end-of-line 5 µm-wide cantilevers for two different 0.18-µm 1P6M complementary metal-oxide semiconductor microelectromechanical systems processes. Results from different runs and lots from each foundry are presented. The methodology and accuracy of the characterization approach, based on optical measurements of test cantilever curvature, are also discussed. Special emphasis is given to the curvature average and variability as a function of the number of stacked layers. Analythical equations for modeling the bending behavior of stacked cantilevers as a function of the tungsten (W) vias that join the metal layers are presented. In addition, the effect of various post-processing conditions and design techniques on the curvature of both single and stacked cantilevers is analyzed. In particular, surpassing certain time-dependent temperature stress conditions after release lead to curvature shifts larger than one order of magnitude. Also, the W via design was found to strongly affect the curvature of the test cantilevers.
dc.format.extent15 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats
dc.subject.lcshMicroelectromechanical systems
dc.subject.lcshIntegrated circuits -- Design and construction
dc.subject.otherComplementary metal-oxide semiconductor microelectromechanical systems (CMOS-MEMS)
dc.subject.otherBending stiffness
dc.subject.otherCurvature
dc.subject.otherStacks
dc.subject.otherTemperature
dc.subject.otherTest cantilevers
dc.titleCurvature of BEOL cantilevers in CMOS-MEMS processes
dc.typeArticle
dc.subject.lemacSistemes microelectromecànics
dc.subject.lemacCircuits integrats -- Disseny i construcció
dc.contributor.groupUniversitat Politècnica de Catalunya. AHA - Arquitectures Hardware Avançades
dc.identifier.doi10.1109/JMEMS.2017.2695571
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://ieeexplore.ieee.org/document/7924353
dc.rights.accessOpen Access
local.identifier.drac21478320
dc.description.versionPostprint (author's final draft)
local.citation.authorValle, J.J.; Méndez Fernández, Daniel; Madrenas, J.; Barrachina, L.
local.citation.publicationNameJournal of microelectromechanical systems
local.citation.volume26
local.citation.number4
local.citation.startingPage895
local.citation.endingPage909


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