The group's scientific activities include:
- Two patents granted in Spain and the United States, both in operation, generating royalties to the University (UPC), and under assessment in Korea, China and Europe.
- The creation of a spin-off (Ludium Lab), currently active, which offers a cloud gaming service, deployed in the cloud.
- The generation of a Technology Transfer Contract between the Universitat Politècnica de Catalunya and the company Ludium Lab.
- The publication of more than 16 articles in JCR journals.
- The management of 8 doctoral theses, 17 master's theses and 62 final degree / career projects.

Enviaments recents

  • Optimization of FinFET-based gain cells for low power sub-vt embedded drams 

    Amat, Esteve; Calomarde Palomino, Antonio; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (2018-06-01)
    Accés obert
    Sub-threshold circuits (sub-V T) are a promising alternative in the implementation of low power electronics. The implementation of gain-cell embedded DRAMs (eDRAMs) based on FinFET devices requires a careful design to ...
  • Virtualizing the Edge: Needs, Opportunities and Trends 

    Marín Tordera, Eva; Masip Bruin, Xavier; Otero Calviño, Beatriz; Rodríguez Luna, Eva (2018)
    Text en actes de congrés
    Accés restringit per política de l'editorial
    Cloud computing, Fog computing; Virtualization
  • Replacing 6T SRAMs with 3T1D DRAMs in the L1 data cache to combat process variability 

    Liang, Xiaoyao; Canal Corretger, Ramon; Wei, Gu-Yeon (2008-02)
    Accés obert
    With continued technology scaling, process variations will be especially detrimental to six-transistor static memory structures (6T SRAMs). A memory architecture using three-transistor, one-diode DRAM (3T1D) cells in the ...
  • Review on suitable eDRAM configurations for next nano-metric electronics era 

    Amat, Esteve; Canal Corretger, Ramon; Calomarde Palomino, Antonio; Rubio Sola, Jose Antonio (2018-03)
    Accés restringit per política de l'editorial
    We summarize most of our studies focused on the main reliability issues that can threat the gain-cells eDRAM behavior when it is simulated at the nano-metric device range has been collected in this review. So, to outperform ...

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