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Fully low temperature interdigitated back-contacted c-Si(n) solar cells based on laser-doping from dielectric stacks
dc.contributor.author | Ortega Villasclaras, Pablo Rafael |
dc.contributor.author | López Rodríguez, Gema |
dc.contributor.author | Muñoz Martín, David |
dc.contributor.author | Martín García, Isidro |
dc.contributor.author | Voz Sánchez, Cristóbal |
dc.contributor.author | Molpeceres Alvarez, Carlos |
dc.contributor.author | Alcubilla González, Ramón |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2018-01-24T17:57:56Z |
dc.date.available | 2019-05-28T02:31:15Z |
dc.date.issued | 2017-09-01 |
dc.identifier.citation | Ortega, P., Lopez, G., Muñoz, D., Martin, I., Voz, C., Molpeceres, C., Alcubilla, R. Fully low temperature interdigitated back-contacted c-Si(n) solar cells based on laser-doping from dielectric stacks. "Solar energy materials and solar cells", 1 Setembre 2017, vol. 169, p. 107-112. |
dc.identifier.issn | 0927-0248 |
dc.identifier.uri | http://hdl.handle.net/2117/113164 |
dc.description | © <2017>. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ |
dc.description.abstract | This work shows a novel fabrication process of interdigitated back-contacted c-Si(n) solar cells based on laser-doped point contacts. In this approach, all the highly-doped regions have been entirely fabricated through UV laser processing of dielectric layers, avoiding the high temperature steps typically involved in conventional diffusion processes. Additionally, the number of patterning steps has been significantly reduced. Aluminum oxide films deposited by thermal ALD on the front surface passivate and reduce reflection losses, while at the rear surface the same films are also used as aluminum source for p+ emitter contacts. n+ regions are created by laser processing a phosphorus-doped amorphous silicon carbide stack deposited by PECVD. As a proof of concept, solar cells (3×3 cm2) have been fabricated with efficiencies beyond 20% with short-circuit current densities and open-circuit voltages up to 40.7 mA/cm2 and 654 mV respectively. |
dc.format.extent | 6 p. |
dc.language.iso | eng |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 Spain |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
dc.subject | Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars |
dc.subject.lcsh | Solar cells |
dc.subject.other | Interdigitated back-contacted solar cell |
dc.subject.other | Crystalline silicon |
dc.subject.other | Laser-doped contacts |
dc.subject.other | Laser processing |
dc.subject.other | ALD Al2O3 |
dc.subject.other | SiCx |
dc.title | Fully low temperature interdigitated back-contacted c-Si(n) solar cells based on laser-doping from dielectric stacks |
dc.type | Article |
dc.subject.lemac | Cèl·lules solars |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1016/j.solmat.2017.05.017 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | http://www.sciencedirect.com/science/article/pii/S0927024817302349 |
dc.rights.access | Open Access |
local.identifier.drac | 21148344 |
dc.description.version | Postprint (author's final draft) |
local.citation.author | Ortega, P.; Lopez, G.; Muñoz, D.; Martin, I.; Voz, C.; Molpeceres, C.; Alcubilla, R. |
local.citation.publicationName | Solar energy materials and solar cells |
local.citation.volume | 169 |
local.citation.startingPage | 107 |
local.citation.endingPage | 112 |
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