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Characterization and application of a-SiCx:H films for the passivation of the c-Si surface
dc.contributor.author | Martín Campos, Ignacio Clemente |
dc.contributor.author | Vetter, M |
dc.contributor.author | Orpella García, Alberto |
dc.contributor.author | Puigdollers i González, Joaquim |
dc.contributor.author | Voz Sánchez, Cristóbal |
dc.contributor.author | Marsal, L F |
dc.contributor.author | Pallarès Marzal, Josep |
dc.contributor.author | Alcubilla González, Ramón |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2018-01-16T19:01:45Z |
dc.date.issued | 2002-01 |
dc.identifier.citation | Martin, I., Vetter, M., Orpella, A., Puigdollers, J., Voz, C., Marsal, L., Pallarès, J., Alcubilla, R. Characterization and application of a-SiCx:H films for the passivation of the c-Si surface. "Thin solid films", Gener 2002, vol. 403-404, p. 476-479. |
dc.identifier.issn | 0040-6090 |
dc.identifier.uri | http://hdl.handle.net/2117/112873 |
dc.description.abstract | In this work we investigate the effects of typical thermal treatments on c-Si surface passivation by intrinsic a-SiCx:H films. First, a forming gas anneal (FGA), (400 °C, 30 min in H2/N2) is applied resulting in an improvement in surface passivation. The best result is a surface recombination velocity lower than 23 cm s-1. A second thermal step (730 °C, 30 s) is studied to try and simulate the firing step for screen-printed contacts. This annealing has no effect in surface passivation indicating that a-SiCx:H films are promising candidates for c-Si surface passivation in the photovoltaic industry. In order to analyze the improvement of surface passivation after FGA, a physical model of surface recombination at the a-SiCx:H/c-Si interface is developed. This improvement is directly connected to a reduction in fundamental recombination velocities of electrons and holes at the interface. A possible explanation could be the reduction in the interface state density due to hydrogen saturation of dangling bonds. |
dc.format.extent | 4 p. |
dc.language.iso | eng |
dc.subject | Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars |
dc.subject | Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors |
dc.subject.lcsh | Solar cells |
dc.subject.lcsh | Amorphous semiconductors |
dc.subject.other | Surface passivation |
dc.subject.other | Amorphous semiconductors |
dc.subject.other | Solar cells |
dc.title | Characterization and application of a-SiCx:H films for the passivation of the c-Si surface |
dc.type | Article |
dc.subject.lemac | Cèl·lules solars |
dc.subject.lemac | Semiconductors amorfs |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1016/S0040-6090(01)01648-0 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | http://www.sciencedirect.com/science/article/pii/S0040609001016480 |
dc.rights.access | Restricted access - publisher's policy |
local.identifier.drac | 763980 |
dc.description.version | Postprint (published version) |
dc.date.lift | 10000-01-01 |
local.citation.author | Martin, I.; Vetter, M.; Orpella, A.; Puigdollers, J.; Voz, C.; Marsal, L.; Pallarès, J.; Alcubilla, R. |
local.citation.publicationName | Thin solid films |
local.citation.volume | 403-404 |
local.citation.startingPage | 476 |
local.citation.endingPage | 479 |
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