Show simple item record

dc.contributor.authorMartín Campos, Ignacio Clemente
dc.contributor.authorVetter, M
dc.contributor.authorOrpella García, Alberto
dc.contributor.authorPuigdollers i González, Joaquim
dc.contributor.authorVoz Sánchez, Cristóbal
dc.contributor.authorMarsal, L F
dc.contributor.authorPallarès Marzal, Josep
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2018-01-16T19:01:45Z
dc.date.issued2002-01
dc.identifier.citationMartin, I., Vetter, M., Orpella, A., Puigdollers, J., Voz, C., Marsal, L., Pallarès, J., Alcubilla, R. Characterization and application of a-SiCx:H films for the passivation of the c-Si surface. "Thin solid films", Gener 2002, vol. 403-404, p. 476-479.
dc.identifier.issn0040-6090
dc.identifier.urihttp://hdl.handle.net/2117/112873
dc.description.abstractIn this work we investigate the effects of typical thermal treatments on c-Si surface passivation by intrinsic a-SiCx:H films. First, a forming gas anneal (FGA), (400 °C, 30 min in H2/N2) is applied resulting in an improvement in surface passivation. The best result is a surface recombination velocity lower than 23 cm s-1. A second thermal step (730 °C, 30 s) is studied to try and simulate the firing step for screen-printed contacts. This annealing has no effect in surface passivation indicating that a-SiCx:H films are promising candidates for c-Si surface passivation in the photovoltaic industry. In order to analyze the improvement of surface passivation after FGA, a physical model of surface recombination at the a-SiCx:H/c-Si interface is developed. This improvement is directly connected to a reduction in fundamental recombination velocities of electrons and holes at the interface. A possible explanation could be the reduction in the interface state density due to hydrogen saturation of dangling bonds.
dc.format.extent4 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
dc.subjectÀrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors
dc.subject.lcshSolar cells
dc.subject.lcshAmorphous semiconductors
dc.subject.otherSurface passivation
dc.subject.otherAmorphous semiconductors
dc.subject.otherSolar cells
dc.titleCharacterization and application of a-SiCx:H films for the passivation of the c-Si surface
dc.typeArticle
dc.subject.lemacCèl·lules solars
dc.subject.lemacSemiconductors amorfs
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1016/S0040-6090(01)01648-0
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://www.sciencedirect.com/science/article/pii/S0040609001016480
dc.rights.accessRestricted access - publisher's policy
drac.iddocument763980
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
upcommons.citation.authorMartin, I., Vetter, M., Orpella, A., Puigdollers, J., Voz, C., Marsal, L., Pallarès, J., Alcubilla, R.
upcommons.citation.publishedtrue
upcommons.citation.publicationNameThin solid films
upcommons.citation.volume403-404
upcommons.citation.startingPage476
upcommons.citation.endingPage479


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record

All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder