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dc.contributor.authorMartín Campos, Ignacio Clemente
dc.contributor.authorVetter, M
dc.contributor.authorOrpella García, Alberto
dc.contributor.authorPuigdollers i González, Joaquim
dc.contributor.authorVoz Sánchez, Cristóbal
dc.contributor.authorMarsal, L F
dc.contributor.authorPallarès Marzal, Josep
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2018-01-16T19:01:45Z
dc.date.issued2002-01
dc.identifier.citationMartin, I., Vetter, M., Orpella, A., Puigdollers, J., Voz, C., Marsal, L., Pallarès, J., Alcubilla, R. Characterization and application of a-SiCx:H films for the passivation of the c-Si surface. "Thin solid films", Gener 2002, vol. 403-404, p. 476-479.
dc.identifier.issn0040-6090
dc.identifier.urihttp://hdl.handle.net/2117/112873
dc.description.abstractIn this work we investigate the effects of typical thermal treatments on c-Si surface passivation by intrinsic a-SiCx:H films. First, a forming gas anneal (FGA), (400 °C, 30 min in H2/N2) is applied resulting in an improvement in surface passivation. The best result is a surface recombination velocity lower than 23 cm s-1. A second thermal step (730 °C, 30 s) is studied to try and simulate the firing step for screen-printed contacts. This annealing has no effect in surface passivation indicating that a-SiCx:H films are promising candidates for c-Si surface passivation in the photovoltaic industry. In order to analyze the improvement of surface passivation after FGA, a physical model of surface recombination at the a-SiCx:H/c-Si interface is developed. This improvement is directly connected to a reduction in fundamental recombination velocities of electrons and holes at the interface. A possible explanation could be the reduction in the interface state density due to hydrogen saturation of dangling bonds.
dc.format.extent4 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
dc.subjectÀrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors
dc.subject.lcshSolar cells
dc.subject.lcshAmorphous semiconductors
dc.subject.otherSurface passivation
dc.subject.otherAmorphous semiconductors
dc.subject.otherSolar cells
dc.titleCharacterization and application of a-SiCx:H films for the passivation of the c-Si surface
dc.typeArticle
dc.subject.lemacCèl·lules solars
dc.subject.lemacSemiconductors amorfs
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1016/S0040-6090(01)01648-0
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://www.sciencedirect.com/science/article/pii/S0040609001016480
dc.rights.accessRestricted access - publisher's policy
local.identifier.drac763980
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
local.citation.authorMartin, I.; Vetter, M.; Orpella, A.; Puigdollers, J.; Voz, C.; Marsal, L.; Pallarès, J.; Alcubilla, R.
local.citation.publicationNameThin solid films
local.citation.volume403-404
local.citation.startingPage476
local.citation.endingPage479


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