Characterization and application of a-SiCx:H films for the passivation of the c-Si surface
View/Open
1-s2.0-S0040609001016480-main.pdf (128,7Kb) (Restricted access)
Request copy
Què és aquest botó?
Aquest botó permet demanar una còpia d'un document restringit a l'autor. Es mostra quan:
- Disposem del correu electrònic de l'autor
- El document té una mida inferior a 20 Mb
- Es tracta d'un document d'accés restringit per decisió de l'autor o d'un document d'accés restringit per política de l'editorial
Cita com:
hdl:2117/112873
Document typeArticle
Defense date2002-01
Rights accessRestricted access - publisher's policy
Abstract
In this work we investigate the effects of typical thermal treatments on c-Si surface passivation by intrinsic a-SiCx:H films. First, a forming gas anneal (FGA), (400 °C, 30 min in H2/N2) is applied resulting in an improvement in surface passivation. The best result is a surface recombination velocity lower than 23 cm s-1. A second thermal step (730 °C, 30 s) is studied to try and simulate the firing step for screen-printed contacts. This annealing has no effect in surface passivation indicating that a-SiCx:H films are promising candidates for c-Si surface passivation in the photovoltaic industry. In order to analyze the improvement of surface passivation after FGA, a physical model of surface recombination at the a-SiCx:H/c-Si interface is developed. This improvement is directly connected to a reduction in fundamental recombination velocities of electrons and holes at the interface. A possible explanation could be the reduction in the interface state density due to hydrogen saturation of dangling bonds.
CitationMartin, I., Vetter, M., Orpella, A., Puigdollers, J., Voz, C., Marsal, L., Pallarès, J., Alcubilla, R. Characterization and application of a-SiCx:H films for the passivation of the c-Si surface. "Thin solid films", Gener 2002, vol. 403-404, p. 476-479.
ISSN0040-6090
Publisher versionhttp://www.sciencedirect.com/science/article/pii/S0040609001016480
Files | Description | Size | Format | View |
---|---|---|---|---|
1-s2.0-S0040609001016480-main.pdf![]() | 128,7Kb | Restricted access |
All rights reserved. This work is protected by the corresponding intellectual and industrial
property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public
communication or transformation of this work are prohibited without permission of the copyright holder