Show simple item record

dc.contributor.authorMartín García, Isidro
dc.contributor.authorVetter, Michael
dc.contributor.authorOrpella García, Alberto
dc.contributor.authorPuigdollers i González, Joaquim
dc.contributor.authorCuevas, A
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2018-01-15T18:59:31Z
dc.date.issued2001-10
dc.identifier.citationMartin, I., Vetter, M., Orpella, A., Puigdollers, J., Cuevas, A., Alcubilla, R. Surface passivation of p-type crystalline Si by plasma enhanced vapour deposited amorphous SiCx Films. "Applied physics letters", Octubre 2001, vol. 79, núm. 14, p. 2199-2201.
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/2117/112825
dc.description.abstractExcellent passivation properties of intrinsic amorphous silicon carbide (a-SiCx:H) films deposited by plasma enhanced chemical vapor deposition on single-crystalline silicon (c-Si) wafers have been obtained. The dependence of the effective surface recombination velocity, Seff, on deposition temperature, total pressure and methane (CH4) to silane (SiH4) ratio has been studied for these films using lifetime measurements made with the quasi-steady-state photoconductance technique. The dependence of the effective lifetime, teff, on the excess carrier density, ¿n, has been measured and also simulated through a physical model based on Shockley–Read–Hall statistics and an insulator/semiconductor structure with fixed charges and band bending. A Seff at the a-SiCx:H/c-Si interface lower than 30¿cm¿s-1 was achieved with optimized deposition conditions. This passivation quality was found to be three times better than that of noncarbonated amorphous silicon (a-Si:H) films deposited under equivalent conditions.
dc.format.extent3 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Física
dc.subject.lcshSilicon-carbide thin film
dc.subject.otherAmorphous semiconductors
dc.subject.otherThin films
dc.subject.otherWide bandgap semiconductors
dc.subject.otherPlasma chemical vapor deposition
dc.subject.otherPlasma materials processing
dc.titleSurface passivation of p-type crystalline Si by plasma enhanced vapour deposited amorphous SiCx Films
dc.typeArticle
dc.subject.lemacCapes fines de carbur de silici
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1063/1.1404406
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://aip.scitation.org/doi/abs/10.1063/1.1404406
dc.rights.accessRestricted access - publisher's policy
drac.iddocument763444
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
upcommons.citation.authorMartin, I.; Vetter, M.; Orpella, A.; Puigdollers, J.; Cuevas, A.; Alcubilla, R.
upcommons.citation.publishedtrue
upcommons.citation.publicationNameApplied physics letters
upcommons.citation.volume79
upcommons.citation.number14
upcommons.citation.startingPage2199
upcommons.citation.endingPage2201


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record

All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder