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dc.contributor.authorVallés Brau, Juan Antonio
dc.contributor.authorLázaro Villa, José Antonio
dc.contributor.authorRebolledo Sanz, Miguel Ángel
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
dc.identifier.citationVallés, J. A., Lazaro, J.A., Rebolledo, M. A. Modeling of integrated erbium-doped waveguide amplifiers with overlapping factors methods. "IEEE journal of quantum electronics", Setembre 1996, vol. 32, núm. 9, p. 1685-1694.
dc.description.abstractAn analysis of the applicability of overlapping factors methods to the modeling of integrated erbium-doped waveguide amplifiers is presented. These methods offer as main advantage a considerable seduction in computation time without a decrease in their effective accuracy. We propose an extension of previous overlapping factors methods in order to model highly erbium-doped waveguide amplifiers. New sets of parameters related to the relevant upconversion and cross-relaxation mechanisms are introduced.
dc.format.extent10 p.
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica
dc.subject.lcshQuantum electronics
dc.subject.otherIntegrated Optical Circuits
dc.titleModeling of integrated erbium-doped waveguide amplifiers with overlapping factors methods
dc.subject.lemacElectrònica quàntica
dc.contributor.groupUniversitat Politècnica de Catalunya. GCO - Grup de Comunicacions Òptiques
dc.description.peerreviewedPeer Reviewed
dc.rights.accessRestricted access - publisher's policy
dc.description.versionPostprint (published version)
local.citation.authorVallés, J. A.; Lazaro, J.A.; Rebolledo, M. A.
local.citation.publicationNameIEEE journal of quantum electronics

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