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Modeling of integrated erbium-doped waveguide amplifiers with overlapping factors methods

dc.contributor.authorVallés Brau, Juan Antonio
dc.contributor.authorLázaro Villa, José Antonio
dc.contributor.authorRebolledo Sanz, Miguel Ángel
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
dc.date.accessioned2018-01-10T15:49:51Z
dc.date.issued1996-09
dc.identifier.citationVallés, J. A., Lazaro, J.A., Rebolledo, M. A. Modeling of integrated erbium-doped waveguide amplifiers with overlapping factors methods. "IEEE journal of quantum electronics", Setembre 1996, vol. 32, núm. 9, p. 1685-1694.
dc.identifier.issn0018-9197
dc.identifier.urihttp://hdl.handle.net/2117/112614
dc.description.abstractAn analysis of the applicability of overlapping factors methods to the modeling of integrated erbium-doped waveguide amplifiers is presented. These methods offer as main advantage a considerable seduction in computation time without a decrease in their effective accuracy. We propose an extension of previous overlapping factors methods in order to model highly erbium-doped waveguide amplifiers. New sets of parameters related to the relevant upconversion and cross-relaxation mechanisms are introduced.
dc.format.extent10 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica
dc.subject.lcshQuantum electronics
dc.subject.otherIntegrated Optical Circuits
dc.titleModeling of integrated erbium-doped waveguide amplifiers with overlapping factors methods
dc.typeArticle
dc.subject.lemacElectrònica quàntica
dc.contributor.groupUniversitat Politècnica de Catalunya. GCO - Grup de Comunicacions Òptiques
dc.identifier.doi10.1109/3.535375
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://ieeexplore.ieee.org/document/535375/
dc.rights.accessRestricted access - publisher's policy
local.identifier.drac21688426
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
local.citation.authorVallés, J. A.; Lazaro, J.A.; Rebolledo, M. A.
local.citation.publicationNameIEEE journal of quantum electronics
local.citation.volume32
local.citation.number9
local.citation.startingPage1685
local.citation.endingPage1694


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