Show simple item record

dc.contributor.authorMaya Sánchez, Mª del Carmen
dc.contributor.authorLázaro Guillén, Antoni
dc.contributor.authorPradell i Cara, Lluís
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
dc.date.accessioned2007-07-02T10:32:32Z
dc.date.available2007-07-02T10:32:32Z
dc.date.created2003
dc.date.issued2003-07-31
dc.identifier.citationMaya, M. C.; Lázaro, A.; Pradell, L. Extraction of an avalanche diode noise model for its application as on-wafer noise source. Microwave and optical technology letters, 2003, vol. 38, núm. 2, p. 89-92.
dc.identifier.issn0895-2477
dc.identifier.urihttp://hdl.handle.net/2117/1120
dc.description.abstractThis paper presents a method to characterize the excess noise ratio (ENR) of an unmatched avalanche noise diode for application as an on-wafer noise source. It is based on the determination of a broadband device noise circuit-model from its measured reflection coefficient and noise powers. Measured ENR is used to calibrated a noise receiver up to 40 GHz.
dc.format.extent89-92
dc.language.isoeng
dc.publisherJOHN WILEY & SONS INC
dc.subjectÀrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques
dc.subject.lcshElectromagnetic noise
dc.subject.lcshMicrowaves
dc.subject.lcshDiodes, Avalanche
dc.subject.otheron-wafer noise source
dc.subject.otherexcess noise ratio
dc.subject.othersmall-signal model
dc.subject.othernoise temperature measurement
dc.subject.othernoise parameters
dc.subject.otheravalanche diodes
dc.subject.otherelectric noise measurement
dc.subject.otherelectron device noise
dc.subject.othersemiconductor device models
dc.subject.otheravalanche diode noise model
dc.subject.otherunmatched avalanche noise diode
dc.subject.otherbroadband device noise circuit-model
dc.subject.otherreflection coefficient
dc.subject.othernoise power
dc.subject.other0 to 40 GHz
dc.titleExtraction of an avalanche diode noise model for its application as on-wafer noise source
dc.typeArticle
dc.subject.lemacSoroll electromagnètic
dc.subject.lemacMicroones
dc.subject.lemacDíodes
dc.contributor.groupUniversitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones
dc.description.peerreviewedPeer Reviewed
dc.rights.accessOpen Access


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record

All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder