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dc.contributorBordonau Farrerons, José
dc.contributorBusquets Monge, Sergio
dc.contributor.authorGuolo, Federico
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2017-12-14T16:55:35Z
dc.date.available2017-12-14T16:55:35Z
dc.date.issued2017-09-13
dc.identifier.urihttp://hdl.handle.net/2117/112085
dc.description.abstractSemiconductor power switches are largely considered the most fragile components in power electronic converters. In order to increase the reliability of power devices, it is important to avoid high junction temperatures and high junction temperature fluctuations, which are basically caused by conduction and switching losses in the devices. The purpose of the thesis is to find and implement a robust method to sense the junction temperature of a power switch and deliver this information to the converter controller. The method will be implemented using a circuit that has to be small, cheap and with low-power consumption, since the circuit will be fed by the same power supply used by the gate-driver circuit of the power device. This method is designed to be applied into the multilevel active-clamped converter. One of the main advantages of this topology is its degree of freedom to select the power switch that concentrates the switching losses in the switching-state transitions. By sensing the switches temperatures, it will be possible to always select the coolest transistor to take the switching losses. This will enable a better distribution of the temperature and a lower cost of the cooling system. In addition to this, an improved reliability of the system can be achieved.
dc.language.isoeng
dc.publisherUniversitat Politècnica de Catalunya
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica
dc.subject.lcshElectronic circuits
dc.subject.lcshTransistors
dc.subject.lcshSemiconductors
dc.subject.lcshElectric current converters
dc.subject.lcshTemperature measurements
dc.titleDesign and implementation of a power transistor temperature measurement circuit for a multilevel active-clamped power converter
dc.typeBachelor thesis
dc.subject.lemacCircuits electrònics
dc.subject.lemacTransistors
dc.subject.lemacSemiconductors
dc.subject.lemacConvertidors de corrent elèctric
dc.subject.lemacTermometria
dc.identifier.slugETSEIB-240.126814
dc.rights.accessOpen Access
dc.date.updated2017-10-02T05:33:59Z
dc.audience.educationlevelGrau
dc.audience.mediatorEscola Tècnica Superior d'Enginyeria Industrial de Barcelona
dc.description.mobilityIncoming


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