Show simple item record

dc.contributor.authorMaya Sánchez, Mª del Carmen
dc.contributor.authorLázaro Guillén, Antoni
dc.contributor.authorPradell i Cara, Lluís
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
dc.date.accessioned2007-07-02T10:04:57Z
dc.date.available2007-07-02T10:04:57Z
dc.date.created2006
dc.date.issued2006-07-31
dc.identifier.citationMaya, M. C.; Lázaro, A.; Pradell, L. A method to simultaneously extract the small-signal equivalent circuit and noise parameters of heterojunction bipolar transistors. Microwave and optical technology letters, 2006, vol. 48, núm. 7, p. 1372-1379.
dc.identifier.issn0895-2477
dc.identifier.urihttp://hdl.handle.net/2117/1118
dc.description.abstractA method to extract the elements of the small-signal equivalent circuit and the noise parameters (NPs) of heterojunction bipolar transistors (HBTs) is presented. The extraction is done by simultaneous fitting of the measured S-parameters, noise figure (for a well-matched impedance), and NPs (estimated using the so-called F50 method). An additional error term, given by the root square sum of the differences between the NPs estimated from the F50 method and the NPs directly computed using the Hawkins model, is considered in order to avoid nonphysical results in the extraction of the intrinsic noise sources. To obtain the initial values of the equivalent-circuit elements, analytical expressions are applied under a number of bias conditions, namely, reverse bias, forward bias, and active bias. Experimental verification of the extraction of the equivalent-circuit elements and NPs of an HBT, up to 8 GHz, are presented, and the NPs are compared to those measured with an independent (tuner-based) method. The behavior of Fmin, extracted using the proposed method, as a function of the HBT collector current, is also presented.
dc.format.extent1372-1379
dc.language.isoeng
dc.publisherJOHN WILEY & SONS INC
dc.subjectÀrees temàtiques de la UPC::Enginyeria de la telecomunicació::Telecomunicació òptica::Fibra òptica
dc.subject.lcshBipolar transistors
dc.subject.lcshNoise Measurement
dc.subject.lcshSignal detection
dc.subject.lcshHeterojunctions
dc.subject.othercircuit noise
dc.subject.otherequivalent circuits
dc.subject.otherheterojunction bipolar transistors
dc.subject.otherS-parameters
dc.subject.othersmall-signal equivalent circuit
dc.subject.othernoise parameters
dc.subject.otherHBT
dc.subject.otherHawkins model
dc.subject.otherintrinsic noise sources
dc.subject.othercollector current
dc.titleA Method to Simultaneously Extract the Small-Signal Equivalent Circuit and Noise Parameters of Heterojunction Bipolar Transistors
dc.typeArticle
dc.subject.lemacTransistors bipolars
dc.subject.lemacSoroll -- Mesurament
dc.contributor.groupUniversitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones
dc.description.peerreviewedPeer Reviewed
dc.rights.accessOpen Access


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record

All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder