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dc.contributor.authorAltet Sanahujes, Josep
dc.contributor.authorGómez Salinas, Dídac
dc.contributor.authorDufis, Cédric Yvan
dc.contributor.authorGonzález Jiménez, José Luis
dc.contributor.authorMateo Peña, Diego
dc.contributor.authorAragonès Cervera, Xavier
dc.contributor.authorMoll Echeto, Francisco de Borja
dc.contributor.authorRubio Sola, Jose Antonio
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2011-01-20T13:34:10Z
dc.date.available2011-01-20T13:34:10Z
dc.date.created2010-05-26
dc.date.issued2010-05-26
dc.identifier.citationAltet, J. [et al.]. On evaluating temperature as observable for CMOS technology variability. A: European workshop on CMOS Variability. "1st IEEE European Workshop on CMOS Variability". Montpellier: 2010, p. 1-6.
dc.identifier.urihttp://hdl.handle.net/2117/11126
dc.description.abstractThe temperature at surface of a silicon die depends on the activity of the circuits placed on it. In this paper, it is analyzed how Process, Voltage and Temperature (PVT) variations affect simultaneously some figures of merit (FoM) of some digital and analog circuits and the power dissipated by such circuits. It is shown that in some cases, a strong correlation exists between the variation of the circuit FoM and the variation of the dissipated power. Since local temperature increase at the silicon surface close to the circuit linearly depends on dissipated power, the results show that temperature can be considered as an observable magnitude for CMOS technology variability monitoring.
dc.format.extent6 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Enginyeria de la telecomunicació
dc.subject.lcshMetal oxide semiconductors, Complementary
dc.subject.lcshSignal theory (Telecommunication)
dc.subject.lcshElectromotive force
dc.subject.lcshRadio frequency microelectromechanical systems
dc.titleOn evaluating temperature as observable for CMOS technology variability
dc.typeConference report
dc.subject.lemacSenyal, Teoria del (Telecomunicació)
dc.contributor.groupUniversitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.rights.accessOpen Access
drac.iddocument2541195
dc.description.versionPostprint (published version)
upcommons.citation.authorAltet, J.; Gómez, D.; Dufis, C.; González, J.; Mateo, D.; Aragones, X.; Moll, F.; Rubio, J.
upcommons.citation.contributorEuropean workshop on CMOS Variability
upcommons.citation.pubplaceMontpellier
upcommons.citation.publishedtrue
upcommons.citation.publicationName1st IEEE European Workshop on CMOS Variability
upcommons.citation.startingPage1
upcommons.citation.endingPage6


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