An experimental approach to Memristive Devices and its applications on Stateful Logic : Design and experimental evaluation of the IMPLY logic gate with Knowm memristors

Cita com:
hdl:2117/111131
Document typeBachelor thesis
Date2017-06-15
Rights accessOpen Access
Except where otherwise noted, content on this work
is licensed under a Creative Commons license
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Attribution-NonCommercial-NoDerivs 3.0 Spain
Abstract
Recent discovery (2008) of the non-volatile binary resistances known as memristors
has attracted new scientific research opportunities. These include novel approaches to
present-day technology such as memory storage, computer architectures and hardware
security. In this project, the physical feasibility of gates using stateful logic will be
experimentally tested to understand surging problems in the design procedure. The
gate being built will aim to perform material implication logic. These memristor-based
logic circuits form the building blocks of crossbar array architectures, a computer architecture
developed currently that would simultaneously perform processing operations
and memory storage.
Throughout this project, the commercially available memristors provided by
Knowm will be characterized. The essential traits of the memristors will be tested for
a DC voltage sweep experiment and a voltage pulse analysis will be performed using
pulses with a width of 2 ms. The analysis will be explained presenting case-to-case
behavior as well as statistical data from up to 200 experiments. Building upon this
knowledge, the IMPLY gate was made and showed problems indicated by previous
research studies, like state drift.
This project serves also as an introduction to memristive technology.
DegreeGRAU EN ENGINYERIA EN TECNOLOGIES INDUSTRIALS (Pla 2010)
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TFG_Aina_Galofre.pdf | 12,87Mb | View/Open | ||
Appendix2.zip | 52,47Mb | application/zip | View/Open |