Reliability issues in RRAM ternary memories affected by variability and aging mechanisms
Tipus de documentText en actes de congrés
EditorInstitute of Electrical and Electronics Engineers (IEEE)
Condicions d'accésAccés obert
Resistive switching Random Access Memories (RRAM) are being considered as a promising alternative for conventional memories mainly due to their high speed, scalability, CMOS compatibility, Non-Volatile behavior (NVM), and consequent orientation to low power consumption. Advances in the RRAM technology as well as enhancement of the control of the cells are opening the use of these devices for multi-valued logic. But the cycle-to-cycle variability and the still reduced endurance are becoming serious limitations. This paper analyzes the impact of both mechanisms on 1T1R cells and suggests potential adaptive mechanisms to enlarge its lifetime.
© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
CitacióRubio, A., Escudero, M., Pouyan, P. Reliability issues in RRAM ternary memories affected by variability and aging mechanisms. A: IEEE International Symposium on On-Line Testing and Robust System Design. "2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS 2017): Thessaloniki, Greece: 3-5 July 2017". Thessaloniki: Institute of Electrical and Electronics Engineers (IEEE), 2017, p. 90-92.
Versió de l'editorhttp://ieeexplore.ieee.org/document/8046238/