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Bias-dependence of FET intrinsic noise sources, determined with a quasi-2D model
| dc.contributor.author | Lázaro Guillén, Antoni |
| dc.contributor.author | Maya Sánchez, Mª del Carmen |
| dc.contributor.author | Pradell i Cara, Lluís |
| dc.contributor.other | Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions |
| dc.date.accessioned | 2007-06-29T08:46:55Z |
| dc.date.available | 2007-06-29T08:46:55Z |
| dc.date.created | 2003 |
| dc.date.issued | 2003-11-30 |
| dc.identifier.citation | Lázaro, A.; Maya, M. C.; Pradell, L. Bias-dependence of FET intrinsic noise sources, determined with a quasi-2D model. Microwave and optical technology letters, 2003, vol. 39, núm. 4, p. 317-319. |
| dc.identifier.issn | 0895-2477 |
| dc.identifier.uri | http://hdl.handle.net/2117/1106 |
| dc.description.abstract | The bias-dependence of microwave-FET intrinsic noise sources in their hybrid configuration is theoretically determined, using a new quasi-2D (Q-2D) physical model based on Thornber's current equation [8]. It is shown that the correlation coefficient cannot be neglected, in agreement with empirical work in the literature. Experimental verification using noise-parameter measurements up to 26 GHz is presented. |
| dc.format.extent | 317-319 |
| dc.language.iso | eng |
| dc.publisher | JOHN WILEY & SONS INC |
| dc.subject | Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques |
| dc.subject.lcsh | Microwave optics |
| dc.subject.lcsh | Noise Measurement |
| dc.subject.lcsh | Field-effect transistors |
| dc.subject.other | equivalent circuits |
| dc.subject.other | microwave field effect transistors |
| dc.subject.other | high electron mobility transistors |
| dc.subject.other | Schottky gate field effect transistors |
| dc.subject.other | semiconductor device models |
| dc.subject.other | semiconductor device noise |
| dc.subject.other | bias-dependence |
| dc.subject.other | microwave-FET intrinsic noise sources |
| dc.subject.other | hybrid configuration |
| dc.subject.other | quasi-2D physical model |
| dc.subject.other | Thornber current equation |
| dc.subject.other | noise-parameter measurements |
| dc.subject.other | FET noise models |
| dc.title | Bias-dependence of FET intrinsic noise sources, determined with a quasi-2D model |
| dc.type | Article |
| dc.subject.lemac | Soroll -- Mesurament |
| dc.subject.lemac | Òptica física |
| dc.subject.lemac | Microones |
| dc.subject.lemac | Transistors d'efecte de camp |
| dc.contributor.group | Universitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones |
| dc.description.peerreviewed | Peer Reviewed |
| dc.rights.access | Open Access |
| local.personalitzacitacio | true |
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