Show simple item record

dc.contributor.authorLázaro Guillén, Antoni
dc.contributor.authorMaya Sánchez, Mª del Carmen
dc.contributor.authorPradell i Cara, Lluís
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
dc.identifier.citationLázaro, A.; Maya, M. C.; Pradell, L. Bias-dependence of FET intrinsic noise sources, determined with a quasi-2D model. Microwave and optical technology letters, 2003, vol. 39, núm. 4, p. 317-319.
dc.description.abstractThe bias-dependence of microwave-FET intrinsic noise sources in their hybrid configuration is theoretically determined, using a new quasi-2D (Q-2D) physical model based on Thornber's current equation [8]. It is shown that the correlation coefficient cannot be neglected, in agreement with empirical work in the literature. Experimental verification using noise-parameter measurements up to 26 GHz is presented.
dc.publisherJOHN WILEY & SONS INC
dc.subjectÀrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques
dc.subject.lcshMicrowave optics
dc.subject.lcshNoise Measurement
dc.subject.lcshField-effect transistors
dc.subject.otherequivalent circuits
dc.subject.othermicrowave field effect transistors
dc.subject.otherhigh electron mobility transistors
dc.subject.otherSchottky gate field effect transistors
dc.subject.othersemiconductor device models
dc.subject.othersemiconductor device noise
dc.subject.othermicrowave-FET intrinsic noise sources
dc.subject.otherhybrid configuration
dc.subject.otherquasi-2D physical model
dc.subject.otherThornber current equation
dc.subject.othernoise-parameter measurements
dc.subject.otherFET noise models
dc.titleBias-dependence of FET intrinsic noise sources, determined with a quasi-2D model
dc.subject.lemacSoroll -- Mesurament
dc.subject.lemacÒptica física
dc.subject.lemacTransistors d'efecte de camp
dc.contributor.groupUniversitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones
dc.description.peerreviewedPeer Reviewed
dc.rights.accessOpen Access

Files in this item


This item appears in the following Collection(s)

Show simple item record

All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder