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dc.contributor.authorLázaro Guillén, Antoni
dc.contributor.authorMaya Sánchez, Mª del Carmen
dc.contributor.authorPradell i Cara, Lluís
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
dc.date.accessioned2007-06-29T08:46:55Z
dc.date.available2007-06-29T08:46:55Z
dc.date.created2003
dc.date.issued2003-11-30
dc.identifier.citationLázaro, A.; Maya, M. C.; Pradell, L. Bias-dependence of FET intrinsic noise sources, determined with a quasi-2D model. Microwave and optical technology letters, 2003, vol. 39, núm. 4, p. 317-319.
dc.identifier.issn0895-2477
dc.identifier.urihttp://hdl.handle.net/2117/1106
dc.description.abstractThe bias-dependence of microwave-FET intrinsic noise sources in their hybrid configuration is theoretically determined, using a new quasi-2D (Q-2D) physical model based on Thornber's current equation [8]. It is shown that the correlation coefficient cannot be neglected, in agreement with empirical work in the literature. Experimental verification using noise-parameter measurements up to 26 GHz is presented.
dc.format.extent317-319
dc.language.isoeng
dc.publisherJOHN WILEY & SONS INC
dc.subjectÀrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques
dc.subject.lcshMicrowave optics
dc.subject.lcshNoise Measurement
dc.subject.lcshField-effect transistors
dc.subject.otherequivalent circuits
dc.subject.othermicrowave field effect transistors
dc.subject.otherhigh electron mobility transistors
dc.subject.otherSchottky gate field effect transistors
dc.subject.othersemiconductor device models
dc.subject.othersemiconductor device noise
dc.subject.otherbias-dependence
dc.subject.othermicrowave-FET intrinsic noise sources
dc.subject.otherhybrid configuration
dc.subject.otherquasi-2D physical model
dc.subject.otherThornber current equation
dc.subject.othernoise-parameter measurements
dc.subject.otherFET noise models
dc.titleBias-dependence of FET intrinsic noise sources, determined with a quasi-2D model
dc.typeArticle
dc.subject.lemacSoroll -- Mesurament
dc.subject.lemacÒptica física
dc.subject.lemacMicroones
dc.subject.lemacTransistors d'efecte de camp
dc.contributor.groupUniversitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones
dc.description.peerreviewedPeer Reviewed
dc.rights.accessOpen Access


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