Bias-dependence of FET intrinsic noise sources, determined with a quasi-2D model
PublisherJOHN WILEY & SONS INC
Rights accessOpen Access
All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder
The bias-dependence of microwave-FET intrinsic noise sources in their hybrid configuration is theoretically determined, using a new quasi-2D (Q-2D) physical model based on Thornber's current equation . It is shown that the correlation coefficient cannot be neglected, in agreement with empirical work in the literature. Experimental verification using noise-parameter measurements up to 26 GHz is presented.
CitationLázaro, A.; Maya, M. C.; Pradell, L. Bias-dependence of FET intrinsic noise sources, determined with a quasi-2D model. Microwave and optical technology letters, 2003, vol. 39, núm. 4, p. 317-319.