Noise model of a reverse-biased Cold-FET applied to the characterization of its ENR

Maya Sánchez, Mª del Carmen; Lázaro Guillén, Antoni; Pradell i Cara, Lluís

View/Open

noise model reverse106599546.pdf (136,5Kb)

View UPCommons Usage Statistics

LA Referencia / Recolecta stats

Cita com:

Show full item record

Maya Sánchez, Mª del Carmen

Lázaro Guillén, Antoni

Pradell i Cara, Lluís

Document typeArticle

Defense date2004-02-28

PublisherJOHN WILEY & SONS INC

Rights accessOpen Access

All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder

Abstract

This paper presents a broadband-noise circuit model for a cold-FET (Vds = 0 V) with a reverse-biased gate. The noise model includes two intrinsic uncorrelated noise-current sources whose spectral densities are determined from measurement of the device's S parameters and noise powers. The model is used to characterize the device's excess noise ratio (ENR) for application to full receiver-noise calibration. Experimental results up to 40 GHz are given.

CitationMaya, M. C.; Lázaro, A.; Pradell, L. Noise model of a reverse-biased cold-FET applied to the characterization of its ENR. Microwave and optical technology letters, 2004, vol. 40, núm. 4, p. 326-330.

URIhttp://hdl.handle.net/2117/1105

ISSN0895-2477

Collections

View UPCommons Usage Statistics

Show full item record

Files	Description	Size	Format	View
noise model reverse106599546.pdf		136,5Kb	PDF	View/Open

UPCommons. Global access to UPC knowledge

Noise model of a reverse-biased Cold-FET applied to the characterization of its ENR

View/Open

Browse