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Interdigitated back contacted c-Si(p) solar cells with photovoltaic efficiencies beyond 22%
dc.contributor.author | Calle Prado, Eric |
dc.contributor.author | Ortega Villasclaras, Pablo Rafael |
dc.contributor.author | López Rodríguez, Gema |
dc.contributor.author | Martín García, Isidro |
dc.contributor.author | Carrió, David |
dc.contributor.author | Masmitjà Rusiñol, Gerard |
dc.contributor.author | Voz Sánchez, Cristóbal |
dc.contributor.author | Orpella García, Alberto |
dc.contributor.author | Puigdollers i González, Joaquim |
dc.contributor.author | Alcubilla González, Ramón |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2017-09-27T17:42:30Z |
dc.date.issued | 2017 |
dc.identifier.citation | Calle, E., Ortega, P., Lopez, G., Martin, I., Carrió, D., Masmitja, G., Voz, C., Orpella, A., Puigdollers, J., Alcubilla, R. Interdigitated back contacted c-Si(p) solar cells with photovoltaic efficiencies beyond 22%. A: Spanish Conference on Electron Devices. "11st Spanish Conference on Electron Devices (CDE 2017). Barcelona, 8-10 Frebuary 2017". Barcelona: Institute of Electrical and Electronics Engineers (IEEE), 2017, p. 109-112. |
dc.identifier.isbn | 978-1-5090-5073-4 |
dc.identifier.uri | http://hdl.handle.net/2117/108077 |
dc.description.abstract | In this work we show a baseline fabrication process of interdigitated back contacted IBC c-Si(p) solar cells, which combines conventional diffusion oven stages to define base p+ and emitter n+/n++ regions at the back side, with outstanding front surface passivation using atomic layer deposited Al2O3 films over random pyramids surfaces. Cells include a selective phosphorous n++ emitter in order to improve contact resistance and simultaneously reduce recombination current density. Fabricated devices reach efficiencies up to 22.2% (AM1.5G 1 kW/m2, T=25°C). This value is so far the highest efficiency reported by any Spanish institution using silicon substrates. 3D simulations envisage efficiencies beyond 24% introducing little changes in the fabrication process. |
dc.format.extent | 4 p. |
dc.language.iso | eng |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) |
dc.subject | Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica |
dc.subject.lcsh | Solar cells |
dc.subject.other | Interdigitated back-contacted solar cell |
dc.subject.other | Crystalline silicon |
dc.subject.other | ALD Al2O3 |
dc.subject.other | Passivation |
dc.subject.other | High efficiency |
dc.title | Interdigitated back contacted c-Si(p) solar cells with photovoltaic efficiencies beyond 22% |
dc.type | Conference report |
dc.subject.lemac | Cèl·lules solars |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1109/CDE.2017.7905230 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | http://ieeexplore.ieee.org/document/7905230/ |
dc.rights.access | Restricted access - publisher's policy |
local.identifier.drac | 21146865 |
dc.description.version | Postprint (published version) |
dc.date.lift | 10000-01-01 |
local.citation.author | Calle, E.; Ortega, P.; Lopez, G.; Martin, I.; Carrió, D.; Masmitja, G.; Voz, C.; Orpella, A.; Puigdollers, J.; Alcubilla, R. |
local.citation.contributor | Spanish Conference on Electron Devices |
local.citation.pubplace | Barcelona |
local.citation.publicationName | 11st Spanish Conference on Electron Devices (CDE 2017). Barcelona, 8-10 Frebuary 2017 |
local.citation.startingPage | 109 |
local.citation.endingPage | 112 |