Design of a broadband CMOS RF power amplifier to establish device-circuit aging correlations

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Barajas Ojeda, EnriqueMés informacióMés informació
Mateo Peña, DiegoMés informacióMés informacióMés informació
Aragonès Cervera, XavierMés informacióMés informacióMés informació
Nafría Maqueda, MontserratMés informació
Document typeConference report
Defense date2017
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Rights accessRestricted access - publisher's policy
All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder
Abstract
CitationBarajas, E., Mateo, D., Aragones, X., Crespo, A., Rodríguez, R., Martin, J., Nafría, M. Design of a broadband CMOS RF power amplifier to establish device-circuit aging correlations. A: International Conference of Microelectronic Test Structures. "2017 IEEE 30th International Conference of Microelectronic Test Structures (ICMTS): March 27-30, 2017: Grenoble, France". Grenoble: Institute of Electrical and Electronics Engineers (IEEE), 2017, p. 1-3. 
URIhttp://hdl.handle.net/2117/107375
DOI10.1109/ICMTS.2017.7954272
ISBN978-1-5090-3615-8
Publisher versionhttp://ieeexplore.ieee.org.recursos.biblioteca.upc.edu/document/7954272/
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