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dc.contributor.authorMartinez, Javier
dc.contributor.authorRodriguez, Rosa
dc.contributor.authorNafria, Montse
dc.contributor.authorTorrents, Gabriel
dc.contributor.authorBota, Sebastian A .
dc.contributor.authorSegura, Jaume
dc.contributor.authorMoll Echeto, Francisco de Borja
dc.contributor.authorRubio Sola, Jose Antonio
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2017-07-28T11:06:39Z
dc.date.issued2017
dc.identifier.citationMartinez, J., Rodriguez, R., Nafria, M., Torrents, G., Bota, S.A., Segura, J., Moll, F., Rubio, A. Statistical characterization and modeling of random telegraph noise effects in 65nm SRAM cells. A: International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design. "SMACD 2017: 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design: 12th-15th June 2017: Giardini Naxos, Taormina, Itlaly". Giardini Naxos, Taormina: Institute of Electrical and Electronics Engineers (IEEE), 2017, p. 1-4.
dc.identifier.isbn978-1-5090-5052-9
dc.identifier.urihttp://hdl.handle.net/2117/107030
dc.description.abstractRandom Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characterization method that provides a significant measurement time reduction. The variability induced in commercial SRAM cells is derived by applying statistical and physics based Montecarlo modeling to the experimental data. Results show that RTN can have a significant impact on the memory write operations and should therefore be taken into account during the memory design phase
dc.format.extent4 p.
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats
dc.subject.lcshIntegrated circuits
dc.subject.otherRandom Telegraph Noise
dc.subject.otherSRAM
dc.subject.othervariability
dc.subject.othercharacterization
dc.subject.othermodeling
dc.titleStatistical characterization and modeling of random telegraph noise effects in 65nm SRAM cells
dc.typeConference report
dc.subject.lemacCircuits integrats
dc.contributor.groupUniversitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.identifier.doi10.1109/SMACD.2017.7981610
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://ieeexplore.ieee.org/abstract/document/7981610/
dc.rights.accessRestricted access - publisher's policy
local.identifier.drac21210042
dc.description.versionPostprint (published version)
dc.relation.projectidinfo:eu-repo/grantAgreement/MINECO/1PE/TEC2013-45638-C3-2-R
dc.date.lift10000-01-01
local.citation.authorMartinez, J.; Rodriguez, R.; Nafria, M.; Torrents, G.; Bota, S.A.; Segura, J.; Moll, F.; Rubio, A.
local.citation.contributorInternational Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design
local.citation.pubplaceGiardini Naxos, Taormina
local.citation.publicationNameSMACD 2017: 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design: 12th-15th June 2017: Giardini Naxos, Taormina, Itlaly
local.citation.startingPage1
local.citation.endingPage4


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