Statistical characterization and modeling of random telegraph noise effects in 65nm SRAM cells

Martinez, Javier; Rodriguez, Rosa; Nafría Maqueda, Montserrat; Torrents, Gabriel; Bota, Sebastian A .; Segura, Jaume; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio

doi:10.1109/SMACD.2017.7981610

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Martinez, Javier

Rodriguez, Rosa

Nafría Maqueda, Montserrat

Torrents, Gabriel

Bota, Sebastian A .

Segura, Jaume

Moll Echeto, Francisco de Borja

Rubio Sola, Jose Antonio

Document typeConference report

Defense date2017

PublisherInstitute of Electrical and Electronics Engineers (IEEE)

Rights accessRestricted access - publisher's policy

All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder

ProjectAPROXIMACION MULTINIVEL AL DISEÑO ORIENTADO A LA FIABILIDAD DE CIRCUITOS INTEGRADOS ANALOGICOS Y DIGITALES (MINECO-TEC2013-45638-C3-2-R)

Abstract

Random Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characterization method that provides a significant measurement time reduction. The variability induced in commercial SRAM cells is derived by applying statistical and physics based Montecarlo modeling to the experimental data. Results show that RTN can have a significant impact on the memory write operations and should therefore be taken into account during the memory design phase

CitationMartinez, J., Rodriguez, R., Nafria, M., Torrents, G., Bota, S.A., Segura, J., Moll, F., Rubio, A. Statistical characterization and modeling of random telegraph noise effects in 65nm SRAM cells. A: International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design. "SMACD 2017: 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design: 12th-15th June 2017: Giardini Naxos, Taormina, Itlaly". Giardini Naxos, Taormina: Institute of Electrical and Electronics Engineers (IEEE), 2017, p. 1-4.

URIhttp://hdl.handle.net/2117/107030

DOI10.1109/SMACD.2017.7981610

ISBN978-1-5090-5052-9

Publisher versionhttp://ieeexplore.ieee.org/abstract/document/7981610/

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Statistical characterization and modeling of random telegraph noise effects in 65nm SRAM cells

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