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dc.contributor.authorRadziunas, Mindaugas
dc.contributor.authorHerrero Simon, Ramon
dc.contributor.authorBotey Cumella, Muriel
dc.contributor.authorStaliunas, Kestutis
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament de Física
dc.date.accessioned2017-06-28T14:04:32Z
dc.date.issued2014
dc.identifier.citationRadziunas, M., Herrero, R., Botey, M., Staliunas, K. Simulations and analysis of beam quality improvement in spatially modulated broad area edge-emitting devices. A: Semiconductor Lasers and Laser Dynamics. "Proccedings SPIE9134, Semiconductor Lasers and Laser Dynamics VI". Brussel·les: International Society for Photo-Optical Instrumentation Engineers (SPIE), 2014, p. 1-8.
dc.identifier.isbn978-162841082-2
dc.identifier.urihttp://hdl.handle.net/2117/105951
dc.description.abstractWe simulate and analyze how beam quality improves while being amplified in edge emitting broad area semiconductor amplifiers with a periodic structuring of the electrical contacts, in both longitudinal and lateral directions. A spatio-temporal traveling wave model is used for simulations of the dynamics and nonlinear interactions of the optical fields, induced polarizations and carrier density. In the case of small beam amplification, the optical field can be expanded into few Bloch modes, so that the system is described by a set of ODEs for the evolution of the mode amplitudes. The analysis of such model provides a deep understanding of the impact of the different parameters on amplification and on spatial (angular) filtering of the beam. It is shown that under realistic parameters the two-dimensional modulation of the current can lead not only to a significant reduction of the emission divergence, but also to an additional amplification of the emitted field
dc.format.extent8 p.
dc.language.isoeng
dc.publisherInternational Society for Photo-Optical Instrumentation Engineers (SPIE)
dc.subjectÀrees temàtiques de la UPC::Física
dc.subjectÀrees temàtiques de la UPC::Ciències de la visió::Òptica física
dc.subject.lcshSemiconductor laser
dc.subject.otherAnisotropy
dc.subject.otherBeam quality
dc.subject.otherBeam shaping
dc.subject.otherEdge emitting lasers
dc.subject.otherPeriodic structure
dc.subject.otherSemiconductor amplifier
dc.subject.otherSemiconductors
dc.subject.otherSpatial filtering
dc.titleSimulations and analysis of beam quality improvement in spatially modulated broad area edge-emitting devices
dc.typeConference report
dc.subject.lemacLàsers de semiconductors
dc.contributor.groupUniversitat Politècnica de Catalunya. DONLL - Dinàmica no Lineal, Òptica no Lineal i Làsers
dc.identifier.doi10.1117/12.2051909
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1868145
dc.rights.accessRestricted access - publisher's policy
drac.iddocument14994674
dc.description.versionPostprint (author's final draft)
dc.date.lift10000-01-01
upcommons.citation.authorRadziunas, M.; Herrero, R.; Botey, M.; Staliunas, K.
upcommons.citation.contributorSemiconductor Lasers and Laser Dynamics
upcommons.citation.pubplaceBrussel·les
upcommons.citation.publishedtrue
upcommons.citation.publicationNameProccedings SPIE9134, Semiconductor Lasers and Laser Dynamics VI
upcommons.citation.startingPage1
upcommons.citation.endingPage8


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