TFET-Based power management circuit for RF energy harvesting
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This paper proposes a Tunnel FET (TFET)-based power management circuit (PMC) for ultra-low power RF energy harvesting applications. In contrast with conventional thermionic devices, the band-to-band tunneling mechanism of TFETs allows a better switching performance at sub-0.2 V operation. As a result, improved efficiencies in RF-powered circuits are achieved, thanks to increased rectification performance at low power levels and to the reduced energy required for a proper PMC operation. It is shown by simulations that heterojunction TFET devices designed with III-V materials can improve the rectification process at received power levels below -20 dBm (915 MHz) when compared to the application of homojunction III-V TFETs and Si FinFETs. For an available power of -25 dBm, the proposed converter is able to deliver 1.1 µW of average power (with 0.5 V) to the output load with a boost efficiency of 86%.
CitacióNunes, D., Moll, F., Valtchev, S. TFET-Based power management circuit for RF energy harvesting. "IEEE Journal of the Electron Devices Society", 14 Novembre 2016, vol. 5, núm. 1, p. 7-17.
Versió de l'editorhttp://ieeexplore.ieee.org/document/7742921/