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dc.contributor.authorCalle, Eric
dc.contributor.authorOrtega Villasclaras, Pablo Rafael
dc.contributor.authorvon Gastrow, Guillaume
dc.contributor.authorMartín García, Isidro
dc.contributor.authorSavin, Hele
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2017-06-12T14:19:45Z
dc.date.issued2016
dc.identifier.citationCalle, E., Ortega, P., von Gastrow, G., Martin, I., Savin, H., Alcubilla, R. Long-term stability of Al2O3 passivated black silicon. A: International Conference on Crystalline Silicon Photovoltaics. "Energy Procedia, vol. 92 (2016)". Chambéry: Elsevier, 2016, p. 341-346.
dc.identifier.isbn1876-6102
dc.identifier.urihttp://hdl.handle.net/2117/105360
dc.description.abstractIn this work we report on the long-term stability of black silicon surfaces passivated with atomic layer deposited (ALD) 20 nm thick Al2O3 films on p- and n-type FZ c-Si substrates. The results are directly compared with random pyramid textured counterparts. The effective surface recombination velocity Seff has been measured within a time frame of one year after activation of surface passivation. The results demonstrate that after an initial slight degradation during the first month Seff values stabilize around 45 and 25 cm/s on p- and n-type black silicon samples, respectively. These values are enough to guarantee stable high efficiency in interdigitated back-contacted (IBC) c-Si(n) solar cells (> 24.5%) using black silicon nanostructures on the front side. Similar, although weaker, losses are also observed in surface passivation on textured samples covered by Al2O3 with equal thickness, indicating that the origin of the instability might be independent of surface morphology.
dc.format.extent6 p.
dc.language.isoeng
dc.publisherElsevier
dc.subjectÀrees temàtiques de la UPC::Enginyeria de la telecomunicació::Telecomunicació òptica::Fotònica
dc.subject.lcshPhotovoltaic power generation
dc.subject.otherBlack silicon
dc.subject.otherNano-texturing
dc.subject.otherSurface passivation
dc.subject.otherLifetime
dc.subject.otherAtomic layer deposition
dc.subject.otherAl2O3
dc.subject.otherSolar cells
dc.titleLong-term stability of Al2O3 passivated black silicon
dc.typeConference lecture
dc.subject.lemacEnergia solar fotovoltaica
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1016/j.egypro.2016.07.093
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://ac.els-cdn.com/S1876610216305203/1-s2.0-S1876610216305203-main.pdf?_tid=41c9c076-4c47-11e7-ac08-00000aacb35f&acdnat=1496925639_e00c666465943ad31a49f54d047c49d0
dc.rights.accessRestricted access - publisher's policy
drac.iddocument21081915
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
upcommons.citation.authorCalle, E.; Ortega, P.; von Gastrow, G.; Martin, I.; Savin, H.; Alcubilla, R.
upcommons.citation.contributorInternational Conference on Crystalline Silicon Photovoltaics
upcommons.citation.pubplaceChambéry
upcommons.citation.publishedtrue
upcommons.citation.publicationNameEnergy Procedia, vol. 92 (2016)
upcommons.citation.startingPage341
upcommons.citation.endingPage346


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