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Insights to memristive memory cell from a reliability perspective
dc.contributor.author | Pouyan, Peyman |
dc.contributor.author | Amat Bertran, Esteve |
dc.contributor.author | Rubio Sola, Jose Antonio |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2017-05-25T13:10:39Z |
dc.date.available | 2017-05-25T13:10:39Z |
dc.date.issued | 2015 |
dc.identifier.citation | Pouyan, P., Amat, E., Rubio, A. Insights to memristive memory cell from a reliability perspective. A: International Conference on Memristive Systems. "MEMRISYS 2015 - International Conference on Memristive Systems". Paphos: Institute of Electrical and Electronics Engineers (IEEE), 2015, p. 1-2. |
dc.identifier.isbn | 9781467392099 |
dc.identifier.uri | http://hdl.handle.net/2117/104851 |
dc.description.abstract | The scaling roadmap of devices under a more than Moore scenario is resulting in the emergence of new types of devices. Among them, memristors seem to be promising candidates to be suitable for various areas of application such as in memories and neuromorphic computing chips. However, memristive devices still face some challenges to be resolved before becoming a mainstream. This work analyzes the impact of two of the main reliability concerns in the design of memristive memories: variability and degradation, and proposes circuit solution to enhance their reliability. |
dc.format.extent | 2 p. |
dc.language.iso | eng |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica |
dc.subject.lcsh | Memristors |
dc.subject.other | Durability |
dc.subject.other | Random access storage |
dc.subject.other | Reconfigurable hardware |
dc.subject.other | Reliability – RRAM |
dc.subject.other | crossbar |
dc.subject.other | Emerging device |
dc.subject.other | Memristor |
dc.subject.other | Process variability |
dc.subject.other | reconfiguration |
dc.title | Insights to memristive memory cell from a reliability perspective |
dc.type | Conference report |
dc.subject.lemac | Ordinadors -- Memòries semiconductores |
dc.contributor.group | Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
dc.identifier.doi | 10.1109/MEMRISYS.2015.7378382 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7378382 |
dc.rights.access | Open Access |
local.identifier.drac | 18770024 |
dc.description.version | Postprint (author's final draft) |
local.citation.author | Pouyan, P.; Amat, E.; Rubio, A. |
local.citation.contributor | International Conference on Memristive Systems |
local.citation.pubplace | Paphos |
local.citation.publicationName | MEMRISYS 2015 - International Conference on Memristive Systems |
local.citation.startingPage | 1 |
local.citation.endingPage | 2 |