Insights to memristive memory cell from a reliability perspective
Tipus de documentText en actes de congrés
EditorInstitute of Electrical and Electronics Engineers (IEEE)
Condicions d'accésAccés obert
The scaling roadmap of devices under a more than Moore scenario is resulting in the emergence of new types of devices. Among them, memristors seem to be promising candidates to be suitable for various areas of application such as in memories and neuromorphic computing chips. However, memristive devices still face some challenges to be resolved before becoming a mainstream. This work analyzes the impact of two of the main reliability concerns in the design of memristive memories: variability and degradation, and proposes circuit solution to enhance their reliability.
CitacióPouyan, P., Amat, E., Rubio, A. Insights to memristive memory cell from a reliability perspective. A: International Conference on Memristive Systems. "MEMRISYS 2015 - International Conference on Memristive Systems". Paphos: Institute of Electrical and Electronics Engineers (IEEE), 2015, p. 1-2.
Versió de l'editorhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7378382