1-D memristor networks as ternary storage cells
Document typeConference report
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Rights accessRestricted access - publisher's policy
Due to its inherent analog nature, the memristor can store information in a continuous form, being thus well-suited for compact multi-bit memory cell technology. In this context, threshold-type switching devices show great retention and switching speed but still poor controllability. To this end, in this work we use one-dimensional (1-D) networks of anti-serially connected threshold-type memristors as means to to create voltage-controlled ternary memristive switches. We demonstrate that the number of memristors and their polarity define the memristance corresponding to the different stored information. We present a simulation-based study of their performance using a threshold-type switching model of bipolar voltage-controlled memristors, and comment on the applied programming-pulse characteristics and the most important device-level properties.
CitationVourkas, I., Abusleme, A., Sirakoulis, G., Rubio, A. 1-D memristor networks as ternary storage cells. A: International Workshop on Cellular Nanoscale Networks and their Applications. "CNNA 2016; 15th International Workshop on Cellular Nanoscale Networks and their Applications". Dresden: Institute of Electrical and Electronics Engineers (IEEE), 2016, p. 101-102.
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