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dc.contributor.authorAlmora, Osbel
dc.contributor.authorGerling Sarabia, Luis Guillermo
dc.contributor.authorVoz Sánchez, Cristóbal
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.authorPuigdollers i González, Joaquim
dc.contributor.authorGarcia-Belmonte, Germà
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2017-05-03T16:12:19Z
dc.date.available2019-05-03T00:30:35Z
dc.date.issued2017-08-01
dc.identifier.citationAlmora, O, Gerling Sarabia, L., Voz, C., Alcubilla, R., Puigdollers, J. Garcia-Belmonte, G. Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells. "Solar energy materials and solar cells", 1 Agost 2017, vol. 168, p. 221-226.
dc.identifier.issn0927-0248
dc.identifier.urihttp://hdl.handle.net/2117/104004
dc.description.abstractTransition metal oxides (TMOs) have recently been proved to efficiently serve as hole-selective contacts in crystalline silicon (c-Si) heterojunction solar cells. In the present work, two TMO/c-Si heterojunctions are explored using MoO3 (reference) and V2O5 as an alternative candidate. It has been found that V2O5 devices present larger (16% improvement) power conversion efficiency mainly due to their higher open-circuit voltage. While V2O5/c-Si devices with textured front surfaces exhibit larger short-circuit currents, it is also observed that flat solar cell architectures allow for passivation of the V2O5/n-Si interface, giving significant carrier lifetimes of 200 µs (equivalent to a surface recombination velocity of Seff ~140 cm s-1) as derived from impedance analysis. As a consequence, a significant open-circuit voltage of 662 mV is achieved. It is found that, at the TMO/c-Si contact, a TMO work function enhancement ¿FTMO occurs during the heterojunction formation with the consequent dipole layer enlargement ¿’=¿+¿FTMO. Our results provide new insights into the TMO/c-Si contact energetics, carrier transport across the interface and surface recombination allowing for further understanding of the nature of TMO/c-Si heterojunctions.
dc.format.extent6 p.
dc.language.isoeng
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
dc.subject.lcshSolar cells
dc.subject.lcshMetallic oxides
dc.subject.lcshMetal oxide semiconductors
dc.subject.otherTransition metal oxides
dc.subject.otherSilicon solar cells
dc.subject.otherImpedance spectroscopy
dc.subject.otherPassivation
dc.subject.otherMinority carrier lifetime
dc.titleSuperior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells
dc.typeArticle
dc.subject.lemacCèl·lules solars
dc.subject.lemacÒxids metàl·lics
dc.subject.lemacMetalls de transició
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1016/j.solmat.2017.04.042
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://www.sciencedirect.com/science/article/pii/S0927024817302118
dc.rights.accessOpen Access
drac.iddocument20330276
dc.description.versionPostprint (published version)
upcommons.citation.authorAlmora, O., Gerling Sarabia, L., Voz, C., Alcubilla, R., Puigdollers, J. Garcia-Belmonte, G.
upcommons.citation.publishedtrue
upcommons.citation.publicationNameSolar energy materials and solar cells
upcommons.citation.volume168
upcommons.citation.startingPage221
upcommons.citation.endingPage226


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Except where otherwise noted, content on this work is licensed under a Creative Commons license: Attribution-NonCommercial-NoDerivs 3.0 Spain