Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells
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Transition metal oxides (TMOs) have recently been proved to efficiently serve as hole-selective contacts in crystalline silicon (c-Si) heterojunction solar cells. In the present work, two TMO/c-Si heterojunctions are explored using MoO3 (reference) and V2O5 as an alternative candidate. It has been found that V2O5 devices present larger (16% improvement) power conversion efficiency mainly due to their higher open-circuit voltage. While V2O5/c-Si devices with textured front surfaces exhibit larger short-circuit currents, it is also observed that flat solar cell architectures allow for passivation of the V2O5/n-Si interface, giving significant carrier lifetimes of 200 µs (equivalent to a surface recombination velocity of Seff ~140 cm s-1) as derived from impedance analysis. As a consequence, a significant open-circuit voltage of 662 mV is achieved. It is found that, at the TMO/c-Si contact, a TMO work function enhancement ¿FTMO occurs during the heterojunction formation with the consequent dipole layer enlargement ¿’=¿+¿FTMO. Our results provide new insights into the TMO/c-Si contact energetics, carrier transport across the interface and surface recombination allowing for further understanding of the nature of TMO/c-Si heterojunctions.
CitacióAlmora, O, Gerling Sarabia, L., Voz, C., Alcubilla, R., Puigdollers, J. Garcia-Belmonte, G. Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells. "Solar energy materials and solar cells", 1 Agost 2017, vol. 168, p. 221-226.
Versió de l'editorhttp://www.sciencedirect.com/science/article/pii/S0927024817302118