RRAM variability and its mitigation schemes
Tipo de documentoTexto en actas de congreso
Fecha de publicación2016
Condiciones de accesoAcceso abierto
Emerging technologies such as RRAMs are attracting significant attention due to their tempting characteristics such as high scalability, CMOS compatibility and non-volatility to replace the current conventional memories. However, critical causes of hardware reliability failures, such as process variation due to their nano-scale structure have gained considerable importance for acceptable memory yields. Such vulnerabilities make it essential to investigate new robust design strategies at the circuit system level. In this paper we have analyzed the RRAM variability phenomenon, its impact and variation tolerant techniques at the circuit level. Finally a variation-monitoring circuit is presented that discerns the reliable memory cells affected by process variability.
CitaciónPouman, P., Amat, E., Hamdioui, S., Rubio, A. RRAM variability and its mitigation schemes. A: International Workshop on Power and Timing Modeling, Optimization and Simulation. "Proceedings PATMOS 2016". Dresden: 2016, p. 141-146.
Versión del editorhttp://ieeexplore.ieee.org.recursos.biblioteca.upc.edu/document/7833679/