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Origin of passivation in hole-selective transition metal oxides for crystalline silicon heterojunction solar cells
dc.contributor.author | Gerling Sarabia, Luis Guillermo |
dc.contributor.author | Voz Sánchez, Cristóbal |
dc.contributor.author | Alcubilla González, Ramón |
dc.contributor.author | Puigdollers i González, Joaquim |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2017-03-29T11:03:17Z |
dc.date.available | 2017-06-20T00:30:29Z |
dc.date.issued | 2017-01-23 |
dc.identifier.citation | Gerling Sarabia, L., Voz, C., Alcubilla, R., Puigdollers, J. Origin of passivation in hole-selective transition metal oxides for crystalline silicon heterojunction solar cells. "Journal of materials research", 23 Gener 2017, vol. 32, núm. 2, p. 260-268. |
dc.identifier.issn | 0884-2914 |
dc.identifier.uri | http://hdl.handle.net/2117/103034 |
dc.description.abstract | Transition metal oxides (TMOs) have recently demonstrated to be a good alternative to boron/phosphorous doped layers in crystalline silicon heterojunction solar cells. In this work, the interface between n-type c-Si (n-Si) and three thermally evaporated TMOs (MoO3, WO3, and V2O5) was investigated by transmission electron microscopy, secondary ion-mass, and x-ray photoelectron spectroscopy. For the oxides studied, surface passivation of n-Si was attributed to an ultra-thin (1.9–2.8 nm) SiOx~1.5 interlayer formed by chemical reaction, leaving oxygen-deficient species (MoO, WO2, and VO2) as by-products. Carrier selectivity was also inferred from the inversion layer induced on the n-Si surface, a result of Fermi level alignment between two materials with dissimilar electrochemical potentials (work function difference ¿¿ = 1 eV). Therefore, the hole-selective and passivating functionality of these TMOs, in addition to their ambient temperature processing, could prove an effective means to lower the cost and simplify solar cell processing. |
dc.format.extent | 9 p. |
dc.language.iso | eng |
dc.subject | Àrees temàtiques de la UPC::Enginyeria dels materials::Materials funcionals::Materials elèctrics i electrònics |
dc.subject | Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars |
dc.subject.lcsh | Solar cells |
dc.subject.lcsh | Transition metals |
dc.subject.lcsh | Heterojunctions |
dc.subject.lcsh | Metallic oxides |
dc.subject.other | Photovoltaic |
dc.subject.other | Passivation |
dc.subject.other | Oxide |
dc.title | Origin of passivation in hole-selective transition metal oxides for crystalline silicon heterojunction solar cells |
dc.type | Article |
dc.subject.lemac | Cèl·lules solars |
dc.subject.lemac | Metalls de transició |
dc.subject.lemac | Heterojunció (Electrònica) |
dc.subject.lemac | Òxids metàl·lics |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1557/jmr.2016.453 |
dc.relation.publisherversion | https://www.cambridge.org/core/journals/journal-of-materials-research/article/div-classtitleorigin-of-passivation-in-hole-selective-transition-metal-oxides-for-crystalline-silicon-heterojunction-solar-cellsdiv/EF79FCAA6AA9F31CBB7B4AEB1E918FAD |
dc.rights.access | Open Access |
local.identifier.drac | 19840829 |
dc.description.version | Postprint (author's final draft) |
local.citation.author | Gerling Sarabia, L.; Voz, C.; Alcubilla, R.; Puigdollers, J. |
local.citation.publicationName | Journal of materials research |
local.citation.volume | 32 |
local.citation.number | 2 |
local.citation.startingPage | 260 |
local.citation.endingPage | 268 |
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