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dc.contributor.authorBoukhili, W.
dc.contributor.authorMahdouani, M.
dc.contributor.authorBourguiga, R.
dc.contributor.authorPuigdollers i González, Joaquim
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2017-03-20T09:57:54Z
dc.date.available2017-03-28T00:30:42Z
dc.date.issued2015-07-01
dc.identifier.citationBoukhili , W., Mahdouani, M., Bourguiga, R., Puigdollers, J. Experimental study and analytical modeling of the channel length influence on the electrical characteristics of small-molecule thin-film transistors. "Superlattices and microstructures", 1 Juliol 2015, vol. 83, p. 224-236.
dc.identifier.issn0749-6036
dc.identifier.urihttp://hdl.handle.net/2117/102643
dc.description.abstractBottom-contact p-type small-molecule copper phthalocyanine (CuPc) thin film transistors (TFTs) with different channel lengths have been fabricated by thermal evaporation. The influence of the channel length on the current-voltage characteristics of the fabricated transistors were investigated in the linear and saturation regimes. The devices exhibit excellent p-type operation characteristics. Results show that devices with smaller channel length (L = 2.5 mu m and 5 mu m) present the best electrical performance, in terms of drain current value, field effect mobility and subthreshold slope. Saturation field-effect mobilities of 1.7 x 10(-3) cm(2) V-1 s(-1) and 1 x 10(-3) cm(2) V-1 s(-1) were obtained for TFTs with channel lengths of L = 2.5 mu m and L = 5 mu m, respectively. Transmission line method was used to study the dependence of the contact resistance with the channel length. Contact resistance becomes dominant with respect to the channel resistance only in the case of short channel devices (L = 2.5 mu m and 5 mu m). It was also found that the field effect mobility is extremely dependent on the channel length dimension. Finally, an analytical model has been developed to reproduce the dependence of the transfer characteristics with the channel length and the obtained data are in good agreement with the experimental results for all fabricated devices.
dc.format.extent13 p.
dc.language.isoeng
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Enginyeria dels materials
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
dc.subject.lcshThin films -- Electric properties
dc.subject.otherP-type small-molecule
dc.subject.otherChannel length effect
dc.subject.otherContact and channel resistances
dc.subject.otherVariable range hopping (VRH) model
dc.subject.otherField-effect transistors
dc.subject.otherCopper Phthalocyanine
dc.subject.otherCharge-transport
dc.subject.otherThreshold voltage
dc.subject.otherGate insulator
dc.subject.otherMobility
dc.subject.otherPerformance
dc.subject.otherSimulation
dc.subject.otherPolymer
dc.subject.otherOctithiophene
dc.titleExperimental study and analytical modeling of the channel length influence on the electrical characteristics of small-molecule thin-film transistors
dc.typeArticle
dc.subject.lemacCapes fines -- Propietats elèctriques
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1016/j.spmi.2015.03.045
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://www.sciencedirect.com/science/article/pii/S0749603615001858
dc.rights.accessOpen Access
local.identifier.drac16827665
dc.description.versionPostprint (author's final draft)
dc.relation.projectidinfo:eu-repo/grantAgreement/MICINN/6PN/TEC2011-27859-C02-01
local.citation.authorBoukhili, W.; Mahdouani, M.; Bourguiga, R.; Puigdollers, J.
local.citation.publicationNameSuperlattices and microstructures
local.citation.volume83
local.citation.startingPage224
local.citation.endingPage236


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