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Influence of compositionally induced defects on the vibrational properties of device grade Cu2ZnSnSe4 absorbers for kesterite based solar cells

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10.1063/1.4913262
 
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hdl:2117/102642

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Dimitrievska, Mirjana
Fairbrother, Andrew
Saucedo, Edgardo
Perez-Rodriguez, Alejandro
Izquierdo-Roca, Victor
Document typeArticle
Defense date2015-02-16
PublisherAmerican Institute of Physics Inc.
Rights accessOpen Access
Attribution-NonCommercial-NoDerivs 3.0 Spain
Except where otherwise noted, content on this work is licensed under a Creative Commons license : Attribution-NonCommercial-NoDerivs 3.0 Spain
Abstract
This work presents a detailed analysis of the impact of compositionally induced defects on the vibrational properties of Cu2ZnSnSe4 absorbers for kesterite based solar cells. Systematic changes in the intensity of the E and B modes located around the 170, 220, and 250 cm-1 frequency regions, which involve mostly cation vibrations, were observed and analyzed in relation to the occurrence of different kinds of defect clusters involving VCu, ZnCu, ZnSn, CuZn, and SnZn point defects. Additional changes are also interpreted in terms of the appearance of SnSe, ZnSe, and CuSe-like contributions at the 185 and 250 cm-1 spectral regions, respectively. The sensitivity of the Raman measurements to the presence of these kinds of defects corroborates the potential of Raman scattering for point defect assessment in these systems. © 2015 AIP Publishing LLC
CitationDimitrievska, M. [et al.]. Influence of compositionally induced defects on the vibrational properties of device grade Cu2ZnSnSe4 absorbers for kesterite based solar cells. "Applied Physics Letters", 16 Febrer 2015, vol. 106, núm. 073903. 
URIhttp://hdl.handle.net/2117/102642
DOI10.1063/1.4913262
ISSN00036951
Publisher versionhttp://aip.scitation.org/doi/10.1063/1.4913262
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