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dc.contributor.authorKufer, Dominik
dc.contributor.authorKonstantatos, Gerasimos
dc.contributor.otherUniversitat Politècnica de Catalunya. Institut de Ciències Fotòniques
dc.date.accessioned2017-03-17T15:18:46Z
dc.date.available2017-10-27T00:30:22Z
dc.date.issued2016-10-27
dc.identifier.citationKufer, D.; Konstantatos, G. Photo-FETs: phototransistors enabled by 2D and 0D nanomaterials. "ACS Photonics", 27 Octubre 2016, vol. 3, núm. 12, p. 2197-2210.
dc.identifier.issn2330-4022
dc.identifier.urihttp://hdl.handle.net/2117/102624
dc.description.abstractThe large diversity of applications in our daily lives that rely on photodetection technology requires photodetectors with distinct properties. The choice of an adequate photodetecting system depends on its application, where aspects such as spectral selectivity, speed, and sensitivity play a critical role. High-sensitivity photodetection covering a large spectral range from the UV to IR is dominated by photodiodes. To overcome existing limitations in sensitivity and cost of state-of-the-art systems, new device architectures and material systems are needed with low-cost fabrication and high performance. Low-dimensional nanomaterials (0D, 1D, 2D) are promising candidates with many unique electrical and optical properties and additional functionalities such as flexibility and transparency. In this Perspective, the physical mechanism of photo-FETs (field-effect transistors) is described and recent advances in the field of low-dimensional photo-FETs and hybrids thereof are discussed. Several requirements for the channel material are addressed in view of the photon absorption and carrier transport process, and a fundamental trade-off between them is pointed out for single-material-based devices. We further clarify how hybrid devices, consisting of an ultrathin channel sensitized with strongly absorbing semiconductors, can circumvent these limitations and lead to a new generation of highly sensitive photodetectors. Recent advances in the development of sensitized low-dimensional photo-FETs are discussed, and several promising future directions for their application in high-sensitivity photodetection are proposed.
dc.format.extent14 p.
dc.language.isoeng
dc.publisherACS
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Física
dc.subject.lcshNanostructured materials
dc.subject.otherNanomaterials
dc.titlePhoto-FETs: phototransistors enabled by 2D and 0D nanomaterials
dc.typeArticle
dc.subject.lemacFotons
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://pubs.acs.org/doi/abs/10.1021/acsphotonics.6b00391
dc.rights.accessOpen Access
dc.description.versionPostprint (author's final draft)
dc.relation.projectidinfo:eu-repo/grantAgreement/EC/FP7/604391/EU/Graphene-Based Revolutions in ICT And Beyond/GRAPHENE
local.citation.publicationNameACS Photonics
local.citation.volume3
local.citation.number12
local.citation.startingPage2197
local.citation.endingPage2210


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