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Charge trapping control in MOS capacitors
dc.contributor.author | Domínguez Pumar, Manuel |
dc.contributor.author | Bheesayagari, Chenna Reddy |
dc.contributor.author | Gorreta Mariné, Sergio |
dc.contributor.author | López Rodríguez, Gema |
dc.contributor.author | Martín García, Isidro |
dc.contributor.author | Blokhina, Elena |
dc.contributor.author | Pons Nin, Joan |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions |
dc.date.accessioned | 2017-02-13T09:10:13Z |
dc.date.available | 2017-02-13T09:10:13Z |
dc.date.issued | 2016-12-26 |
dc.identifier.citation | Dominguez, M., Bheesayagari, C., Gorreta, S., Lopez, G., Martin, I., Blokhina, E., Pons, J. Charge trapping control in MOS capacitors. "IEEE transactions on industrial electronics", 26 Desembre 2016, vol. PP, núm. 99, p. 1-7. |
dc.identifier.issn | 0278-0046 |
dc.identifier.uri | http://hdl.handle.net/2117/100877 |
dc.description.abstract | This paper presents an active control of C-V characteristic for MOS capacitors based on Sliding Mode control and sigma-delta-modulation. The capacitance of the device at a certain voltage is measured periodically and adequate voltage excitations are generated by a feedback loop to place the C-V curve at the desired target position. Experimental results are presented for a n-type c-Si MOS capacitor made with silicon dioxide. It is shown that with this approach it is possible to shift horizontally the C-V curve to the desired operation point. A physical analysis is also presented to explain how the C-V horizontal displacements can be linked to charge trapping in the bulk of the oxide and/or in the silicon-oxide interface. Finally, design criteria are provided for tuning the main parameters of the sliding mode controller. |
dc.format.extent | 7 p. |
dc.language.iso | eng |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica |
dc.subject.lcsh | Metal oxide semiconductors |
dc.subject.other | Capacitance-voltage characteristics |
dc.subject.other | Voltage measurement |
dc.subject.other | Capacitance |
dc.subject.other | Charge carrier processes |
dc.subject.other | Capacitance measurement |
dc.subject.other | MOS capacitors |
dc.subject.other | Feedback loop |
dc.title | Charge trapping control in MOS capacitors |
dc.type | Article |
dc.subject.lemac | Metall-òxid-semiconductors |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1109/TIE.2016.2645159 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | http://ieeexplore.ieee.org/document/7797504/ |
dc.rights.access | Open Access |
local.identifier.drac | 19669876 |
dc.description.version | Postprint (author's final draft) |
local.citation.author | Dominguez, M.; Bheesayagari, C.; Gorreta, S.; Lopez, G.; Martin, I.; Blokhina, E.; Pons, J. |
local.citation.publicationName | IEEE transactions on industrial electronics |
local.citation.volume | PP |
local.citation.number | 99 |
local.citation.startingPage | 1 |
local.citation.endingPage | 7 |
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