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dc.contributor.authorShirmohammadli, V.
dc.contributor.authorSaberkari, Alireza
dc.contributor.authorMartínez García, Herminio
dc.contributor.authorAlarcón Cot, Eduardo José
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2017-02-09T13:43:04Z
dc.date.issued2016
dc.identifier.citationShirmohammadli, V., Saberkari, A., Martinez, H., Alarcon, E. Enhancing the performance of output-capacitorless LDO regulators by pass-transistor segmentation. A: IEEE International Symposium on Circuits and Systems. "2016 IEEE International Symposium on Circuits and Systems (ISCAS 2016): Montreal, Quebec, Canada: 22-25 May 2016". Montréal, Quebec: Institute of Electrical and Electronics Engineers (IEEE), 2016, p. 490-493.
dc.identifier.isbn978-1-4799-5342-4
dc.identifier.urihttp://hdl.handle.net/2117/100765
dc.description.abstractThis paper deals with a circuit proposal along with theoretical analysis to provide a solution for enhancing the stability and transient performance of external capacitorless low-dropout regulators (CL-LDOs) by segmenting the pass transistor to smaller sizes. The stability and transient analysis is carried out on the CL-LDO with two different size-segmented pass transistors in comparison with the conventional CL-LDO with single large size pass device. The analysis shows that the pass transistor segmentation leads to better stability, i.e., greater phase margin especially at no-load and light-load conditions, wider bandwidth, and improved transient behavior, i.e., lower settling time and output voltage deviations due to the load transients. The aforementioned topologies are modeled and validated in HSPICE using a 0.35 µm CMOS process, and the results are in conformity with the analytical statements.
dc.format.extent4 p.
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica
dc.subject.lcshElectronic systems
dc.subject.otherexternal capacitorless low-dropout regulators
dc.subject.otherCL-LDO
dc.subject.othertransient analysis
dc.subject.othersize-segmented pass transistors
dc.subject.otherpass transistor segmentation
dc.subject.otherphase margin
dc.subject.otherHSPICE
dc.subject.otherCMOS process
dc.subject.othersize 0.35 mum
dc.titleEnhancing the performance of output-capacitorless LDO regulators by pass-transistor segmentation
dc.typeConference report
dc.subject.lemacSistemes electrònics
dc.contributor.groupUniversitat Politècnica de Catalunya. EPIC - Energy Processing and Integrated Circuits
dc.identifier.doi10.1109/ISCAS.2016.7527284
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://ieeexplore.ieee.org/document/7527284/
dc.rights.accessRestricted access - publisher's policy
local.identifier.drac18852209
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
local.citation.authorShirmohammadli, V.; Saberkari, A.; Martinez, H.; Alarcon, E.
local.citation.contributorIEEE International Symposium on Circuits and Systems
local.citation.pubplaceMontréal, Quebec
local.citation.publicationName2016 IEEE International Symposium on Circuits and Systems (ISCAS 2016): Montreal, Quebec, Canada: 22-25 May 2016
local.citation.startingPage490
local.citation.endingPage493


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