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dc.contributor.authorReverter Cubarsí, Ferran
dc.contributor.authorPerpiñà Gilabet, Xavier
dc.contributor.authorBarajas Ojeda, Enrique
dc.contributor.authorLeón, Javier
dc.contributor.authorVellvehi, Miquel
dc.contributor.authorJordà, Xavier
dc.contributor.authorAltet Sanahujes, Josep
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2017-01-30T12:20:54Z
dc.date.available2018-06-01T00:30:24Z
dc.date.issued2016-05-01
dc.identifier.citationReverter, F., Perpiñà, X., Barajas, E., León, J., Vellvehi, M., Jordà, X., Altet, J. MOSFET dynamic thermal sensor for IC testing applications. "Sensors and actuators A. Physical", 1 Maig 2016, vol. 242, p. 195-202.
dc.identifier.issn0924-4247
dc.identifier.urihttp://hdl.handle.net/2117/100287
dc.description.abstractThis paper analyses how a single metal-oxide-semiconductor field-effect transistor (MOSFET) can be employed as a thermal sensor to measure on-chip dynamic thermal signals caused by a power-dissipating circuit under test (CUT). The measurement is subjected to two low-pass filters (LPF). The first LPF depends on the thermal properties of the heat-conduction medium (i.e. silicon) and the CUT-sensor distance, whereas the second depends on the electrical properties of the sensing circuit such as the bias current and the dimensions of the MOSFET sensor. This is evaluated along the paper through theoretical models, simulations, and experimental data resulting from a chip fabricated in 0.35 mu m CMOS technology. Finally, the proposed thermal sensor and the knowledge extracted from this paper are applied to estimate the linearity of a radio-frequency (RF) amplifier. (C) 2016 Elsevier B.V. All rights reserved.
dc.format.extent8 p.
dc.language.isoeng
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica
dc.subject.lcshMetal oxide semiconductor field-effect transistors
dc.subject.otherIC testing
dc.subject.otherMOSFET
dc.subject.otherRF testing
dc.subject.otherTemperature sensor
dc.subject.otherThermal coupling
dc.subject.otherThermal testing
dc.subject.otherINTEGRATED-CIRCUITS
dc.subject.otherTEMPERATURE SENSORS
dc.subject.otherBIPOLAR-TRANSISTORS
dc.subject.otherDETECTOR
dc.titleMOSFET dynamic thermal sensor for IC testing applications
dc.typeArticle
dc.subject.lemacTransistors MOSFET
dc.contributor.groupUniversitat Politècnica de Catalunya. e-CAT - Circuits i Transductors Electrònics
dc.contributor.groupUniversitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.identifier.doi10.1016/j.sna.2016.03.016
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://www.sciencedirect.com/science/article/pii/S0924424716301145
dc.rights.accessOpen Access
local.identifier.drac18733462
dc.description.versionPostprint (author's final draft)
local.citation.authorReverter, F.; Perpiñà, X.; Barajas, E.; León, J.; Vellvehi, M.; Jordà, X.; Altet, J.
local.citation.publicationNameSensors and actuators A. Physical
local.citation.volume242
local.citation.startingPage195
local.citation.endingPage202


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