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MOSFET dynamic thermal sensor for IC testing applications
dc.contributor.author | Reverter Cubarsí, Ferran |
dc.contributor.author | Perpiñà Gilabet, Xavier |
dc.contributor.author | Barajas Ojeda, Enrique |
dc.contributor.author | León, Javier |
dc.contributor.author | Vellvehi, Miquel |
dc.contributor.author | Jordà, Xavier |
dc.contributor.author | Altet Sanahujes, Josep |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2017-01-30T12:20:54Z |
dc.date.available | 2018-06-01T00:30:24Z |
dc.date.issued | 2016-05-01 |
dc.identifier.citation | Reverter, F., Perpiñà, X., Barajas, E., León, J., Vellvehi, M., Jordà, X., Altet, J. MOSFET dynamic thermal sensor for IC testing applications. "Sensors and actuators A. Physical", 1 Maig 2016, vol. 242, p. 195-202. |
dc.identifier.issn | 0924-4247 |
dc.identifier.uri | http://hdl.handle.net/2117/100287 |
dc.description.abstract | This paper analyses how a single metal-oxide-semiconductor field-effect transistor (MOSFET) can be employed as a thermal sensor to measure on-chip dynamic thermal signals caused by a power-dissipating circuit under test (CUT). The measurement is subjected to two low-pass filters (LPF). The first LPF depends on the thermal properties of the heat-conduction medium (i.e. silicon) and the CUT-sensor distance, whereas the second depends on the electrical properties of the sensing circuit such as the bias current and the dimensions of the MOSFET sensor. This is evaluated along the paper through theoretical models, simulations, and experimental data resulting from a chip fabricated in 0.35 mu m CMOS technology. Finally, the proposed thermal sensor and the knowledge extracted from this paper are applied to estimate the linearity of a radio-frequency (RF) amplifier. (C) 2016 Elsevier B.V. All rights reserved. |
dc.format.extent | 8 p. |
dc.language.iso | eng |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica |
dc.subject.lcsh | Metal oxide semiconductor field-effect transistors |
dc.subject.other | IC testing |
dc.subject.other | MOSFET |
dc.subject.other | RF testing |
dc.subject.other | Temperature sensor |
dc.subject.other | Thermal coupling |
dc.subject.other | Thermal testing |
dc.subject.other | INTEGRATED-CIRCUITS |
dc.subject.other | TEMPERATURE SENSORS |
dc.subject.other | BIPOLAR-TRANSISTORS |
dc.subject.other | DETECTOR |
dc.title | MOSFET dynamic thermal sensor for IC testing applications |
dc.type | Article |
dc.subject.lemac | Transistors MOSFET |
dc.contributor.group | Universitat Politècnica de Catalunya. e-CAT - Circuits i Transductors Electrònics |
dc.contributor.group | Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
dc.identifier.doi | 10.1016/j.sna.2016.03.016 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | http://www.sciencedirect.com/science/article/pii/S0924424716301145 |
dc.rights.access | Open Access |
local.identifier.drac | 18733462 |
dc.description.version | Postprint (author's final draft) |
local.citation.author | Reverter, F.; Perpiñà, X.; Barajas, E.; León, J.; Vellvehi, M.; Jordà, X.; Altet, J. |
local.citation.publicationName | Sensors and actuators A. Physical |
local.citation.volume | 242 |
local.citation.startingPage | 195 |
local.citation.endingPage | 202 |
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