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dc.contributor.authorRadulović, Milan
dc.contributor.authorŽivanovič, Darko
dc.contributor.authorRuiz, Daniel
dc.contributor.authorDe Supinski, Bronis
dc.contributor.authorMcKee, Sally
dc.contributor.authorRadojković, Petar
dc.contributor.authorAyguadé Parra, Eduard
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Arquitectura de Computadors
dc.date.accessioned2017-01-27T09:20:30Z
dc.date.issued2015
dc.identifier.citationRadulovic, M., Zivanovic, D., Ruiz, D., De Supinski, B., McKee, S., Radojkovic, P., Ayguade, E. Another trip to the wall: how much will stacked DRAM benefit HPC?. A: International Symposium on Memory Systems. "MEMSYS 2015: proceedings of the First International Symposium on Memory Systems: Washington DC, October 5-8, 2015". Association for Computing Machinery (ACM), 2015, p. 31-36.
dc.identifier.isbn978-1-4503-3604-8
dc.identifier.urihttp://hdl.handle.net/2117/100169
dc.description.abstractFirst defined two decades ago, the memory wall remains a fundamental limitation to system performance. Recent innovations in 3D-stacking technology enable DRAM devices with much higher bandwidths than traditional DIMMs. The first such products will soon hit the market, and some of the publicity claims that they will break through the memory wall. Here we summarize our analysis and expectations of how such 3D-stacked DRAMs will affect the memory wall for a set of representative HPC applications. We conclude that although 3D-stacked DRAM is a major technological innovation, it cannot eliminate the memory wall.
dc.format.extent6 p.
dc.language.isoeng
dc.publisherAssociation for Computing Machinery (ACM)
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Informàtica::Sistemes d'informació::Emmagatzematge i recuperació de la informació
dc.subject.lcshComputer storage devices
dc.subject.otherMemory wall
dc.subject.otherDRAM
dc.subject.otherBandwidth
dc.subject.otherLatency
dc.subject.otherHybrid memory cube (HMC)
dc.subject.otherHigh bandwidth memory (HBM)
dc.subject.otherHPC
dc.titleAnother trip to the wall: how much will stacked DRAM benefit HPC?
dc.typeConference report
dc.subject.lemacOrdinadors -- Dispositius de memòria
dc.contributor.groupUniversitat Politècnica de Catalunya. CAP - Grup de Computació d'Altes Prestacions
dc.identifier.doi10.1145/2818950.2818955
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://dl.acm.org/citation.cfm?doid=2818950.2818955
dc.rights.accessRestricted access - publisher's policy
local.identifier.drac19377609
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
local.citation.authorRadulovic, M.; Zivanovic, D.; Ruiz, D.; De Supinski, B.; McKee, S.; Radojkovic, P.; Ayguade, E.
local.citation.contributorInternational Symposium on Memory Systems
local.citation.publicationNameMEMSYS 2015: proceedings of the First International Symposium on Memory Systems: Washington DC, October 5-8, 2015
local.citation.startingPage31
local.citation.endingPage36


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