In the present work we have fabricated capacitors with silicon nanocrystals embedded in a dielectric matrix. All the techniques used in the fabrication process are fully compatible with CMOS technology. We will show the luminescence of the device when a continuous voltage is applied between the top and bottom contacts. Also, we will see how the intensity{current curve suggests charge trapping in silicon nanocrystals and the creation of conductive paths within the dielectric matrix.

Projecte realitzat en col.laboració amb IMB-CNM-CSIC