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dc.contributorMartín García, Isidro
dc.contributor.authorNogueira Vázquez, Luis
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.description.abstractThe measurement of the effective carrier lifetime in silicon has a great importance for material characterization in the photovoltaic field since carrier lifetime represents a fundamental quality factor in solar cell production. Photoluminescence is a technique that allows lifetime measurement at low injection level not affected by the measurement artifacts (minority carrier trapping and the depletion-region modulation) typically found in other techniques. We have designed and constructed a device to calibrate and measure the photoluminescence response of silicon solar cells. Then we have applied the quasisteady- state photoluminescence technique (QSS-PL) to obtain the minority carrier lifetime curve. The objective is to extend the available measurement range to obtain additional information about surface recombination.
dc.publisherUniversitat Politècnica de Catalunya
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Spain
dc.subjectÀrees temàtiques de la UPC::Enginyeria de la telecomunicació::Telecomunicació òptica::Fotònica
dc.subject.otherSolar cell
dc.subject.otherCarrier Lifetime
dc.subject.otherSurface Recombination
dc.titleExperimental setup for carrier lifetime measurement based on photoluminescence response. Design, construction and calibration
dc.typeMaster thesis (pre-Bologna period)
dc.rights.accessOpen Access
dc.audience.educationlevelEstudis de primer/segon cicle
dc.audience.mediatorEscola Tècnica Superior d'Enginyeria de Telecomunicació de Barcelona

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Attribution-NonCommercial-NoDerivs 3.0 Spain
Except where otherwise noted, content on this work is licensed under a Creative Commons license : Attribution-NonCommercial-NoDerivs 3.0 Spain