Analyzing stability concerns in the presence of variations in Subthreshold SRAM
View/Open
Cita com:
hdl:2099.1/20728
Document typeMaster thesis
Date2012-07-02
Rights accessOpen Access
All rights reserved. This work is protected by the corresponding intellectual and industrial
property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public
communication or transformation of this work are prohibited without permission of the copyright holder
Abstract
In this work, we analyse the stability of the SRAM bitcells when operating in subthreshold supply voltages.We propose a new bit cell with higher stability than 6T Bitcell,that is able to discharge the bit lines in 41% less time than the 6T as it's discharge path is only of single transistor.
DegreeMÀSTER UNIVERSITARI EN INTEL·LIGÈNCIA ARTIFICIAL (Pla 2012)