Ponències/Comunicacions de congressos
http://hdl.handle.net/2117/79769
2024-03-29T15:34:11Z
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Slow-envelope shaping function FPGA implementation for 5G NR envelope tracking PA
http://hdl.handle.net/2117/387316
Slow-envelope shaping function FPGA implementation for 5G NR envelope tracking PA
Li, Wantao; Bartzoudis, Nikolaos; Rubio Fernández, José; López Bueno, David; Montoro López, Gabriel; Gilabert Pinal, Pere Lluís
This paper focuses on the FPGA implementation of a slew-rate reduction (SR) shaping function for envelope tracking (ET) power amplifiers (PAs). The SR envelope has been proved effective to trade-off power efficiency and linearity in ET PA systems where the envelope tracking modulator (ETM) is bandwidth limited. However, the implementation issues need to be addressed when targeting high clock rates to cope with current 5G new radio wide-band signals. This paper shows the FPGA implementation of the SR envelope generation. We explore the use of high-level synthesis (HLS) for the SR envelope generation to evaluate the performance and resource usage of the hardware architecture. The HLS design is also compared with a hand-written hardware description language (HDL) version. An in-depth analysis shows strengths and limitations of the HLS design to meet the timing constraints when considering a throughput of 614.4 MSa/s. © 2022 IEEE.
2023-05-11T14:08:09Z
Li, Wantao
Bartzoudis, Nikolaos
Rubio Fernández, José
López Bueno, David
Montoro López, Gabriel
Gilabert Pinal, Pere Lluís
This paper focuses on the FPGA implementation of a slew-rate reduction (SR) shaping function for envelope tracking (ET) power amplifiers (PAs). The SR envelope has been proved effective to trade-off power efficiency and linearity in ET PA systems where the envelope tracking modulator (ETM) is bandwidth limited. However, the implementation issues need to be addressed when targeting high clock rates to cope with current 5G new radio wide-band signals. This paper shows the FPGA implementation of the SR envelope generation. We explore the use of high-level synthesis (HLS) for the SR envelope generation to evaluate the performance and resource usage of the hardware architecture. The HLS design is also compared with a hand-written hardware description language (HDL) version. An in-depth analysis shows strengths and limitations of the HLS design to meet the timing constraints when considering a throughput of 614.4 MSa/s. © 2022 IEEE.
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Fast modeling of lateral modes in BAW resonators with arbitrary in-plane geometry
http://hdl.handle.net/2117/382846
Fast modeling of lateral modes in BAW resonators with arbitrary in-plane geometry
Udaondo Guerrero, Carlos; Collado Gómez, Juan Carlos; Mateu Llevadot, Jordi
The Transmission Line Matrix (TLM) method is used to model and predict lateral spurious resonances in a BAW resonator. The dispersive characteristics of the main propagating mode, which are defined by the stack of materials, are considered with dispersive transmission lines along the in-plane lateral directions of the resonator. The particle displacement profiles obtained with the TLM method are coupled to the electric domain. From these, the input impedance of the resonator is obtained. This allows for fast simulations of the lateral resonances using nodal admittance matrices. © 2022 IEEE.
2023-02-09T14:57:24Z
Udaondo Guerrero, Carlos
Collado Gómez, Juan Carlos
Mateu Llevadot, Jordi
The Transmission Line Matrix (TLM) method is used to model and predict lateral spurious resonances in a BAW resonator. The dispersive characteristics of the main propagating mode, which are defined by the stack of materials, are considered with dispersive transmission lines along the in-plane lateral directions of the resonator. The particle displacement profiles obtained with the TLM method are coupled to the electric domain. From these, the input impedance of the resonator is obtained. This allows for fast simulations of the lateral resonances using nodal admittance matrices. © 2022 IEEE.
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Application of the input-output equivalent sources method for the simulation of nonlinearities in TC-SAW resonators and filters
http://hdl.handle.net/2117/381680
Application of the input-output equivalent sources method for the simulation of nonlinearities in TC-SAW resonators and filters
González Rodríguez, Marta; Collado Gómez, Juan Carlos; Mateu Mateu, Jordi; González Arbesú, José María; Huebner, Sebatian; Aigner, Robert
A good understanding of the nonlinearity mechanism in SAW devices is a crucial aspect in the filter stage. Nonlinear intermodulation distortion (IMD) may lead to spurious signals falling into the receiver band and limiting its sensitivity. Identify the dominant source of nonlinearity specially at high-power is important for a good prediction of the filter nonlinear response. In this work, third-order intermodulation (IMD3) products in TC-SAW (Temperature Compensated-SAW) devices are presented. Within this work we apply the previously developed Input-Output Equivalent Sources (IOES) method to compute nonlinearities of more complex structures such as ladder-type and CRF (Coupled Resonator Filter) filter structures.
2023-02-02T09:32:45Z
González Rodríguez, Marta
Collado Gómez, Juan Carlos
Mateu Mateu, Jordi
González Arbesú, José María
Huebner, Sebatian
Aigner, Robert
A good understanding of the nonlinearity mechanism in SAW devices is a crucial aspect in the filter stage. Nonlinear intermodulation distortion (IMD) may lead to spurious signals falling into the receiver band and limiting its sensitivity. Identify the dominant source of nonlinearity specially at high-power is important for a good prediction of the filter nonlinear response. In this work, third-order intermodulation (IMD3) products in TC-SAW (Temperature Compensated-SAW) devices are presented. Within this work we apply the previously developed Input-Output Equivalent Sources (IOES) method to compute nonlinearities of more complex structures such as ladder-type and CRF (Coupled Resonator Filter) filter structures.
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Updated BVD modeling of AlN-based solidly mounted resonators working at cryogenic and high temperatures: from -160°C up to 130°C
http://hdl.handle.net/2117/377027
Updated BVD modeling of AlN-based solidly mounted resonators working at cryogenic and high temperatures: from -160°C up to 130°C
Lugo Hernández, Eduardo; Collado Gómez, Juan Carlos; Mateu Mateu, Jordi; Carmona Cejas, José Manuel; Mirea, Teona; Olivares Roza, Jimena
In this work we theoretically and experimentally assess the behavior of AlN-based Solidly Mounted Resonators (SMR) at cryogenic and high temperatures. This study can be useful for precise behavior prediction of SMR sensors working as gas detectors in the food preservation industry, or the industrial and automotive ones. We have subjected SMRs to temperatures from -160°C up to 130°C in high vacuum conditions (6×10 -7 mBar) and compared their experimental performance to a modelled one. We employed an updated mBVD model that includes low temperatures effects, and we show good accuracy between data. Our SMRs have fairly preserved their quality factors and electromechanical coupling factors at both cryogenic and high temperatures: Qa= 482, Qr = 288 and k eff = 6.30% at -160°C to a Qa = 477, Qr = 265 and k eff = 6.39% at 130°C.
2022-11-24T08:39:33Z
Lugo Hernández, Eduardo
Collado Gómez, Juan Carlos
Mateu Mateu, Jordi
Carmona Cejas, José Manuel
Mirea, Teona
Olivares Roza, Jimena
In this work we theoretically and experimentally assess the behavior of AlN-based Solidly Mounted Resonators (SMR) at cryogenic and high temperatures. This study can be useful for precise behavior prediction of SMR sensors working as gas detectors in the food preservation industry, or the industrial and automotive ones. We have subjected SMRs to temperatures from -160°C up to 130°C in high vacuum conditions (6×10 -7 mBar) and compared their experimental performance to a modelled one. We employed an updated mBVD model that includes low temperatures effects, and we show good accuracy between data. Our SMRs have fairly preserved their quality factors and electromechanical coupling factors at both cryogenic and high temperatures: Qa= 482, Qr = 288 and k eff = 6.30% at -160°C to a Qa = 477, Qr = 265 and k eff = 6.39% at 130°C.
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RF leakage compensation in wideband envelope tracking power amplifiers for mobile terminals
http://hdl.handle.net/2117/375824
RF leakage compensation in wideband envelope tracking power amplifiers for mobile terminals
Li, Wantao; Montoro López, Gabriel; Gilabert Pinal, Pere Lluís
This paper presents a new linearization method to compensate for the unwanted RF leakage that appears at the ouput of envelope tracking modulators (ETMs) when operating envelope tracking (ET) power amplifiers (PAs) with wideband signals. This RF leakage is combined in the ETM with the dy-namic supply signal and generates unwanted nonlinear distortion at the RF output of the ET PA. A leakage cancellation method based on an envelope generalized memory polynomial (EGMP) behavioral model is proposed to compensate for this unwanted distortion. The linearization method is validated on a system-on-chip ET PA board designed by Hisilicon for mobile applications. Thanks to the proposed cancellation technique, it is possible to meet the out-of-band linearity requirements when considering a 60 MHz bandwidth new radio OFDM-like signal at band 7. © 2022 IEEE.
2022-11-07T18:42:05Z
Li, Wantao
Montoro López, Gabriel
Gilabert Pinal, Pere Lluís
This paper presents a new linearization method to compensate for the unwanted RF leakage that appears at the ouput of envelope tracking modulators (ETMs) when operating envelope tracking (ET) power amplifiers (PAs) with wideband signals. This RF leakage is combined in the ETM with the dy-namic supply signal and generates unwanted nonlinear distortion at the RF output of the ET PA. A leakage cancellation method based on an envelope generalized memory polynomial (EGMP) behavioral model is proposed to compensate for this unwanted distortion. The linearization method is validated on a system-on-chip ET PA board designed by Hisilicon for mobile applications. Thanks to the proposed cancellation technique, it is possible to meet the out-of-band linearity requirements when considering a 60 MHz bandwidth new radio OFDM-like signal at band 7. © 2022 IEEE.
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Method to measure reflection coefficient under CW high-power signals in SAW resonators
http://hdl.handle.net/2117/368169
Method to measure reflection coefficient under CW high-power signals in SAW resonators
González Rodríguez, Marta; Collado Gómez, Juan Carlos; Mateu Mateu, Jordi; González Arbesú, José María; Huebner, Sebatian; Aigner, Robert
Improving power handling and lifetime are key assets to ensure device performance and reliability. SAW resonators composed by very thin cross-section inter-digital transducer (IDT) structures make difficult to control the current density and thus acoustomigration plays and important role since degradation of the metallization is one of the main failure modes. The motivation of this work is to monitor and characterize the resonator behavior even at high powers levels that can damage the device. The method is based on a feed-forward-based technique to measure the reflection coefficient of SAW resonators under a fixed-frequency high power heating (HPH) signal.
2022-06-08T17:42:49Z
González Rodríguez, Marta
Collado Gómez, Juan Carlos
Mateu Mateu, Jordi
González Arbesú, José María
Huebner, Sebatian
Aigner, Robert
Improving power handling and lifetime are key assets to ensure device performance and reliability. SAW resonators composed by very thin cross-section inter-digital transducer (IDT) structures make difficult to control the current density and thus acoustomigration plays and important role since degradation of the metallization is one of the main failure modes. The motivation of this work is to monitor and characterize the resonator behavior even at high powers levels that can damage the device. The method is based on a feed-forward-based technique to measure the reflection coefficient of SAW resonators under a fixed-frequency high power heating (HPH) signal.
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Out of band improved performance into a measured 5G N77 band transversal filter
http://hdl.handle.net/2117/368096
Out of band improved performance into a measured 5G N77 band transversal filter
Udaondo Guerrero, Carlos; Collado Gómez, Juan Carlos; Mateu Mateu, Jordi; Perea Robles, Rafael; Yusud, Yazid; Giménez Bonastre, Alfred Raul; Aigner, Robert
Transversal networks for electroacoustic filters had been proposed and manufactured recently. One of the main problems that arose in the first prototype were the spurious modes due to the mirror stack of the Solidly Mounted Resonators (SMR). In this work, different approaches for solving this problem are discussed, relying on Mason's circuit-based simulations of each resonator and of the filter topology. The main drawbacks and advantages of the different approaches are discussed in terms of fabrication and mirror efficiency.
2022-06-07T15:27:51Z
Udaondo Guerrero, Carlos
Collado Gómez, Juan Carlos
Mateu Mateu, Jordi
Perea Robles, Rafael
Yusud, Yazid
Giménez Bonastre, Alfred Raul
Aigner, Robert
Transversal networks for electroacoustic filters had been proposed and manufactured recently. One of the main problems that arose in the first prototype were the spurious modes due to the mirror stack of the Solidly Mounted Resonators (SMR). In this work, different approaches for solving this problem are discussed, relying on Mason's circuit-based simulations of each resonator and of the filter topology. The main drawbacks and advantages of the different approaches are discussed in terms of fabrication and mirror efficiency.
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Synthesis procedure for ladder acoustic wave filters starting in series resonator
http://hdl.handle.net/2117/367614
Synthesis procedure for ladder acoustic wave filters starting in series resonator
Perea Robles, Rafael; Mateu Mateu, Jordi; Collado Gómez, Juan Carlos
This work provides a new procedure to synthesize acoustic wave ladder filters starting with series resonators. The novelty of this method relies in a new synthesis methodology to extract a series inductance in filter configurations starting in series resonators. As a matter of fact, this new synthesis provides solutions with a reduced value of the electrostatic capacitance, thereby giving resonators with smaller size.
2022-05-23T11:32:25Z
Perea Robles, Rafael
Mateu Mateu, Jordi
Collado Gómez, Juan Carlos
This work provides a new procedure to synthesize acoustic wave ladder filters starting with series resonators. The novelty of this method relies in a new synthesis methodology to extract a series inductance in filter configurations starting in series resonators. As a matter of fact, this new synthesis provides solutions with a reduced value of the electrostatic capacitance, thereby giving resonators with smaller size.
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Transversal filters based on stacked crystal filters with spurious mode suppression
http://hdl.handle.net/2117/367112
Transversal filters based on stacked crystal filters with spurious mode suppression
Yusuf, Yazid; Gimenez, Alfred; AlJoumayly, Mudar; Mateu Mateu, Jordi; Collado Gómez, Juan Carlos
The transversal filter topology consists of resonators which require both positive and negative coupling to the input/output which typically necessitates the use of a BALUN. In this paper, transversal filters based on stacked crystal filters (SCFs) are presented. By inverting the polarity in one side of the SCF structure, both positive and negative couplings can be achieved, and the BALUN is no longer needed. In addition, a new approach to suppress spurious modes of SCFs is introduced. © 2021 IEEE.
2022-05-09T14:43:09Z
Yusuf, Yazid
Gimenez, Alfred
AlJoumayly, Mudar
Mateu Mateu, Jordi
Collado Gómez, Juan Carlos
The transversal filter topology consists of resonators which require both positive and negative coupling to the input/output which typically necessitates the use of a BALUN. In this paper, transversal filters based on stacked crystal filters (SCFs) are presented. By inverting the polarity in one side of the SCF structure, both positive and negative couplings can be achieved, and the BALUN is no longer needed. In addition, a new approach to suppress spurious modes of SCFs is introduced. © 2021 IEEE.
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FPGA implementation of memory-based digital predistorters with high-level synthesis
http://hdl.handle.net/2117/367005
FPGA implementation of memory-based digital predistorters with high-level synthesis
Li, Wantao; Guillena Berenguer, Estefanía; Montoro López, Gabriel; Gilabert Pinal, Pere Lluís
This paper presents a scalable look-up table (LUT) architecture for implementing digital predistortion (DPD) linearizers in a field programmable gate array (FPGA) by using the high-level synthesis (HLS) software. This architecture can be used in most memory-based DPD behavioral models whose basis functions can be expressed as a combination of basic predistortion cells (BPCs). The advantages of the proposed LUT-based architecture are evidenced in terms of resources usage, throughput, and power consumption of the corresponding programmable logic (PL). The DPD linearization performance was tested considering different LUT sizes on a load-modulated balanced amplifier (LMBA), using two LTE 20 MHz signals over a total 60 MHz instantaneous bandwidth.
2022-05-06T11:44:47Z
Li, Wantao
Guillena Berenguer, Estefanía
Montoro López, Gabriel
Gilabert Pinal, Pere Lluís
This paper presents a scalable look-up table (LUT) architecture for implementing digital predistortion (DPD) linearizers in a field programmable gate array (FPGA) by using the high-level synthesis (HLS) software. This architecture can be used in most memory-based DPD behavioral models whose basis functions can be expressed as a combination of basic predistortion cells (BPCs). The advantages of the proposed LUT-based architecture are evidenced in terms of resources usage, throughput, and power consumption of the corresponding programmable logic (PL). The DPD linearization performance was tested considering different LUT sizes on a load-modulated balanced amplifier (LMBA), using two LTE 20 MHz signals over a total 60 MHz instantaneous bandwidth.