Design of a CMOS temperature sensor in 180 nm for image sensor ICs

dc.audience.educationlevel	Màster
dc.audience.mediator	Escola Tècnica Superior d'Enginyeria de Telecomunicació de Barcelona
dc.contributor	Bofill Petit, Adria
dc.contributor	Aragonès Cervera, Xavier
dc.contributor.author	Font Garcia, Albert
dc.contributor.other	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned	2020-02-21T12:38:10Z
dc.date.issued	2020-01
dc.date.updated	2020-02-11T06:50:25Z
dc.description.abstract	A temperature sensor based on a diode-connected BJT will be designed for the −40 ºC to +100 ºC temperature range and an accuracy of ±1.5 ºC after a one–point calibration. The sensor will be developed from a theoretical point of view and the performance will be checked by extensive simulations, putting special emphasis on the design robustness against PVT variations. The sensor should be laid out at some point during Winter 2020.
dc.identifier.slug	ETSETB-230.148774
dc.identifier.uri	https://hdl.handle.net/2117/178292
dc.language.iso	eng
dc.publisher	Universitat Politècnica de Catalunya
dc.rights.access	Restricted access - confidentiality agreement
dc.subject	Àrees temàtiques de la UPC::Enginyeria electrònica
dc.subject.lcsh	Detectors
dc.subject.lcsh	Thermodynamics
dc.subject.lemac	Detectors
dc.subject.lemac	Termodinàmica
dc.subject.other	temperature
dc.subject.other	sensor
dc.subject.other	thermodiode
dc.title	Design of a CMOS temperature sensor in 180 nm for image sensor ICs
dc.type	Master thesis
dspace.entity.type	Publication

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