Characterization of random telegraph noise and its impact on reliability of SRAM sense amplifiers

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dc.contributor.authorMartín Martínez, Javier
dc.contributor.authorDiaz, Javier
dc.contributor.authorRodríguez, Rosana
dc.contributor.authorNafría Maqueda, Montserrat
dc.contributor.authorAymerich Humet, Xavier
dc.contributor.authorRoca Moreno, Elisenda
dc.contributor.authorFernández Fernández, Francisco V.
dc.contributor.authorRubio Sola, Jose Antonio
dc.contributor.groupUniversitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2015-03-26T12:40:02Z
dc.date.available2015-03-26T12:40:02Z
dc.date.created2014
dc.date.issued2014
dc.description.abstractA new method for the analysis of multilevel Random Telegraph Noise (RTN) signals has been recently presented, which can also be applied in the case of large background noise. In this work, the method is extended to evaluate the RTN-related variation of the device drain current. The RTN parameters obtained from experimental traces are used to simulate the impact of RTN in the drain current of pMOS transistors in SRAM voltage sense amplifiers. The results show that RTN can lead to read errors of the stored data.
dc.description.versionPostprint (author’s final draft)
dc.format.extent6 p.
dc.identifier.citationMartín, J. [et al.]. Characterization of random telegraph noise and its impact on reliability of SRAM sense amplifiers. A: European Workshop on CMOS Variability. "2014 5th European Workshop on CMOS Variability (VARI)". Palma Mallorca, Illes Balears: Institute of Electrical and Electronics Engineers (IEEE), 2014, p. 1-6.
dc.identifier.doi10.1109/VARI.2014.6957088
dc.identifier.isbn978-1-4799-5399-8
dc.identifier.urihttps://hdl.handle.net/2117/27058
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.rights.accessOpen Access
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors
dc.subject.lcshTransistors
dc.subject.lemacTransistors
dc.subject.otherRandom Telegraph Noise
dc.subject.otherCMOS
dc.subject.otherparameter extraction
dc.subject.othercharacterization
dc.subject.otherReliability
dc.subject.othersense amplifiers
dc.titleCharacterization of random telegraph noise and its impact on reliability of SRAM sense amplifiers
dc.typeConference report
dspace.entity.typePublication
local.citation.authorMartín, J.; Diaz, J.; Rodriguez, R.; Nafria, M.; Aymerich , X.; Roca, E.; Fernández, F.; Rubio, A.
local.citation.contributorEuropean Workshop on CMOS Variability
local.citation.endingPage6
local.citation.publicationName2014 5th European Workshop on CMOS Variability (VARI)
local.citation.pubplacePalma Mallorca, Illes Balears
local.citation.startingPage1
local.identifier.drac15357107

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