The laser-induced current carrier generation and transport under large biasing voltages in photoconductive materials located in electrode gap region of photoconductive antennas is a complex process involving many different phenomena that interact with each other in intricate ways. Given the large biasing voltages employed, a simple model that assumes that the carriers travel along the biasing field lines allows to retain the basic features of the photocarrier generation process. The model is presented in detail and results for a typical interdigitated electrode are shown to well agree with measures found in the literature.