Impact of atomic layer deposition temperature on electrical and optical properties of ZnO:Al films

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dc.contributor.authorMasmitjà Rusiñol, Gerard
dc.contributor.authorEstarlich Gil, Pau
dc.contributor.authorLópez Rodríguez, Gema
dc.contributor.authorMartín García, Isidro
dc.contributor.authorVoz Sánchez, Cristóbal
dc.contributor.authorPlacidi, Marcel Jose
dc.contributor.authorTorrens Dinarès, Arnau
dc.contributor.authorSaucedo Silva, Edgardo Ademar
dc.contributor.authorVasquez, Pia
dc.contributor.authorMuñoz, Delfina
dc.contributor.authorPuigdollers i González, Joaquim
dc.contributor.authorOrtega Villasclaras, Pablo Rafael
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT-Solar - Grup de Micro i Nano Tecnologies per Energia Solar
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Gràfica i de Disseny
dc.contributor.otherUniversitat Politècnica de Catalunya. Doctorat en Enginyeria Electrònica
dc.date.accessioned2024-03-14T11:18:26Z
dc.date.available2024-03-14T11:18:26Z
dc.date.issued2024-03-01
dc.description.abstractThis work highlights the impact of growth temperature on electrical and optical properties of Al-doped ZnO (AZO) films deposited by atomic layer deposition (ALD) technique. The ALD process and super-cycle sequence have been optimized, identifying their influence on film resistivity. By using this optimum ALD procedure, the optical and electrical properties of AZO films have been widely analyzed considering the deposition temperature. Results show promising values with film resistivity in the range of 1 m¿cm and average optical absorption below 2% for 50 nm thick AZO layers. Hall effect, X-ray diffraction and ellipsometry measurements point out that these excellent values are related to their high carrier concentration and mobility, crystalline phase and optical band gap resulting in ALD AZO films with very good properties to be applied in photovoltaic devices as transparent conductive oxide electrode
dc.description.sponsorshipThis work has been supported by the Spanish government under projects PID2019-109215RB-C41 (SCALED), PID2020-115719RB-C21 (GETPV), TED2021-131778B–C22 (TROPIC) and TED2021-129758B–C32 (TransEl) funded by MCIN/AEI/10.13039/501100011033. TROPIC and TransEl projects have also support from the European Union “NextGenerationEU”/PRTR program. This work has been developing under the FOTOCER project's guidelines, which is partially funded by CDTI and MICIN Spanish government through the European Union NextGeneration/PRTR program. G. M. acknowledges financial support of the Grant – UPC Margarita Salas 2021, of the Spanish Ministry of Universities and the European Unión – NextGenerationEU. The authors wish to express their thanks to Ivan Caño for his help about XRD measurements included in the supplementary information and carried out at the Centre de Recerca en Ciència i Enginyeria Multiescala de Barcelona (CRCEMB).
dc.description.versionPostprint (author's final draft)
dc.identifier.citationMasmitjà, G. [et al.]. Impact of atomic layer deposition temperature on electrical and optical properties of ZnO:Al films. "Journal of Science: Advanced Materials and Devices", 1 Març 2024, vol. 9, núm. 2.
dc.identifier.doi10.1016/j.jsamd.2024.100698
dc.identifier.issn2468-2179
dc.identifier.urihttps://hdl.handle.net/2117/404515
dc.language.isoeng
dc.publisherElsevier
dc.relation.projectidinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2022-138434OB-C51/ES/INTEGRACION DE NUEVOS CONTACTOS SELECTIVOS Y CAPAS ACTIVAS EN DISPOSITIVOS DE NUEVA GENERACION PARA APLICACIONES DE ENERGIA RENOVABLE/
dc.relation.projectidinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2020-115719RB-C21/ES/DISPOSITIVOS DE GERMANIO DE ALTA EFICIENCIA PARA APLICACIONES TERMOFOTOVOLTAICAS DE BAJO COSTE/
dc.relation.projectidinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/TED2021-129758B-C32/ES/FUNCIONALIZACIÓN DE ELECTRODOS TRANSPARENTES EN ESTRUCTURAS HÍBRIDAS METAL-ÓXIDO CON CAPAS DIPOLARES PARA LA MEJORA DE CONTACTOS SELECTIVOS EN DISPOSITIVOS OPTOELECTRÓNICOS
dc.relation.projectidinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/TED2021-131778B-C22/ES/DESARROLLO DE MATERIALES Y COMPONENTES PARA DISPOSITIVOS HÍBRIDOS TERMIÓNICO-FOTOVOLTAICOS
dc.relation.publisherversionhttps://www.sciencedirect.com/science/article/pii/S2468217924000297
dc.rights.accessOpen Access
dc.rights.licensenameAttribution-NonCommercial-NoDerivatives 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subjectÀrees temàtiques de la UPC::Enginyeria dels materials
dc.subject.lcshZinc oxide----Optical properties
dc.subject.lcshZinc oxide----Electric properties
dc.subject.lcshPhotovoltaic power generation
dc.subject.lemacÒxid de zinc----Propietats òptiques
dc.subject.lemacÒxid de zinc----Propietats elèctriques
dc.subject.lemacEnergia fotovoltaica--Generació
dc.subject.otherAtomic layer deposition
dc.subject.otherTransparent conductive oxide
dc.subject.otherAluminum doped zinc oxide
dc.titleImpact of atomic layer deposition temperature on electrical and optical properties of ZnO:Al films
dc.typeArticle
dspace.entity.typePublication
local.citation.authorMasmitjà, G.; Estarlich, P.; Lopez, G.; Martin, I.; Voz, C.; Placidi, M.; Torrens, A.; Saucedo Silva, Edgardo; Vasquez, P.; Muñoz, D.; Puigdollers, J.; Ortega, P.
local.citation.endingPagearticle 100698
local.citation.number2, article 100698
local.citation.publicationNameJournal of Science: Advanced Materials and Devices
local.citation.volume9
local.identifier.drac38447316

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