The interdigitated back-contacted (IBC) solar cell concept has been extensively studied for single-junction cells and more recently as a good choice for three-terminal tandem devices. In this work, carrier-selective contacts based on transition metal oxides deposited by atomic layer deposition (ALD) technique are applied to IBC c-Si(n) devices. In the first part of the study, we develop a hole-selective contact based on thin ALD vanadium oxide (V2O5) layers without using an amorphous silicon interlayer. The ALD process has been optimised, i.e. number of ALD cycles and deposition temperature, as a trade-off between surface passivation and contact resistivity. Noticeable surface passivation with recombination current densities around 100 fA/cm2, as well as reasonable contact resistivity values below 250 mOcm2 are reached using 200 ALD V2O5 cycles deposited at a deposition temperature of 125 °C (~10 nm layer thickness). The optimised ALD V2O5-based contact is combined with both an ALD TiO2-based electron-selective contact and an excellent surface passivation in non-contacted regions provided by ALD Al2O3 films, to form a fully ALD IBC c-Si(n) solar cell scheme. Fabricated devices yield photovoltaic efficiencies and pseudo efficiencies, i.e. calculated without series resistance losses, of 18.6% and 21.1% respectively (3 cm × 3 cm device area). These results reveal the potential of the ALD technique to deposit transition metal oxide (TMO) films as selective contacts on high efficiency devices, paving the way of using low thermal-budget, low cost and highly scalable processes for a highly demanding IBC solar cell architecture in the photovoltaic industry.