Noise model of a reverse-biased Cold-FET applied to the characterization of its ENR

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dc.contributor.authorMaya Sánchez, Mª del Carmen
dc.contributor.authorLázaro Guillén, Antoni
dc.contributor.authorPradell i Cara, Lluís
dc.contributor.groupUniversitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
dc.date.accessioned2007-06-29T08:32:28Z
dc.date.available2007-06-29T08:32:28Z
dc.date.created2003
dc.date.issued2004-02-28
dc.description.abstractThis paper presents a broadband-noise circuit model for a cold-FET (Vds = 0 V) with a reverse-biased gate. The noise model includes two intrinsic uncorrelated noise-current sources whose spectral densities are determined from measurement of the device's S parameters and noise powers. The model is used to characterize the device's excess noise ratio (ENR) for application to full receiver-noise calibration. Experimental results up to 40 GHz are given.
dc.description.peerreviewedPeer Reviewed
dc.format.extent326-330
dc.identifier.citationMaya, M. C.; Lázaro, A.; Pradell, L. Noise model of a reverse-biased cold-FET applied to the characterization of its ENR. Microwave and optical technology letters, 2004, vol. 40, núm. 4, p. 326-330.
dc.identifier.issn0895-2477
dc.identifier.urihttps://hdl.handle.net/2117/1105
dc.language.isoeng
dc.publisherJOHN WILEY & SONS INC
dc.rights.accessOpen Access
dc.subjectÀrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques
dc.subject.lcshNoise Measurement
dc.subject.lcshMicrowaves
dc.subject.lemacSoroll -- Mesurament
dc.subject.lemacMicroones
dc.subject.otheron-wafer noise source
dc.subject.otherexcess noise ratio
dc.subject.othersmall signal equivalent circuit model
dc.subject.othernoise model
dc.subject.othercalibration
dc.subject.otherelectric noise measurement
dc.subject.otherequivalent circuits
dc.subject.othermicrowave field effect transistors
dc.subject.otherS-parameters
dc.subject.otherbroadband-noise circuit model
dc.subject.otherreverse-biased cold-FET
dc.subject.othernoise-current sources
dc.subject.otherexcess noise ratio
dc.subject.otherfull receiver-noise calibration
dc.subject.othernoise powers
dc.subject.other40 GHz
dc.titleNoise model of a reverse-biased Cold-FET applied to the characterization of its ENR
dc.typeArticle
dspace.entity.typePublication
local.personalitzacitaciotrue

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