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  • Design and comparison of flipped active inductors with high quality factors 

    Saberkari, Alireza; Ziabakhsh, Soheil; Martínez García, Herminio; Alarcón Cot, Eduardo José (Institution of Electrical Engineers, 2014-05-19)
    Article
    Restricted access - publisher's policy
    A new design based on the flipped-structure for RF active inductors is presented. The conventional flipped-active inductor (FAI) composed of only two transistors is considered as a starting structure. However, it suffers ...