Now showing items 1-20 of 26

    • 1-D memristor networks as ternary storage cells 

      Vourkas, Ioannis; Abusleme, Angel; Sirakoulis, Georgios; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2016)
      Conference report
      Restricted access - publisher's policy
      Due to its inherent analog nature, the memristor can store information in a continuous form, being thus well-suited for compact multi-bit memory cell technology. In this context, threshold-type switching devices show great ...
    • A circuit-level SPICE modeling strategy for the simulation of behavioral variability in ReRAM 

      Cayo, Jose; Vourkas, Ioannis; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2022)
      Conference report
      Open Access
      The intrinsic behavioral variability in resistive switching devices (also known as 'memristors' or 'ReRAM devices') can be a reliability limiting factor or an opportunity for applications where randomness of resistance ...
    • A TCAD model for silicon nitride based memristive devices 

      Stavroulakis, Emmanouil; Vasileiadis, Nikolaos; Mavropoulis, Alexandros; Chatzipaschalis, Ioannis; Tsipas, Evangelos; Rallis, Konstantinos; Vourkas, Ioannis; Dimitrakis, Panagiotis; Sirakoulis, Georgios Ch. (Institute of Electrical and Electronics Engineers (IEEE), 2023)
      Conference report
      Restricted access - publisher's policy
      Si 3 N 4 -based ReRAM devices showcase intriguing performance characteristics of low switching threshold, high endurance and retention that lay the foundations for the development of the next-generation low-power artificial ...
    • Alternative memristor-based interconnect topologies for fast adaptive synchronization of chaotic circuits 

      Escudero López, Manuel; Vourkas, Ioannis; Rubio Sola, Jose Antonio (2020-09)
      Article
      Open Access
      Resistive switching devices (memristors) constitute an emerging device technology promising for a vari- ety of applications that are currently being studied. In this context, the use of memristors as coupling el- ements ...
    • An on-line test strategy and analysis for a 1T1R crossbar memory 

      Escudero, Manel; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio; Vourkas, Ioannis (Institute of Electrical and Electronics Engineers (IEEE), 2017)
      Conference report
      Open Access
      Memristors are emerging devices known by their nonvolability, compatibility with CMOS processes and high density in circuits density in circuits mostly owing to the crossbar nanoarchitecture. One of their most notable ...
    • Circuit topology and synthesis flow co-design for the development of computational ReRAM 

      Fernandez Hernandez, Carlos; Vourkas, Ioannis; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2022)
      Conference report
      Open Access
      Emerging memory technologies will play a decisive role in the quest for more energy-efficient computing systems. Computational ReRAM structures based on resistive switching devices (memristors) have been explored for ...
    • Coupled physarum-inspired memristor oscillators for neuron-like operations 

      Ntinas, Vasileios; Vourkas, Ioannis; Sirakoulis, Georgios Ch.; Adamatzky, Andrew; Rubio Sola, Jose Antonio (2018)
      Conference report
      Open Access
      Unconventional computing has been studied intensively, even after the appearance of CMOS technology. Currently, it has returned to the spotlight because CMOS is about to reach its physical limits, given that the constant ...
    • Crossbar-based memristive logic-in-memory architecture 

      Papandroulikadis, Georgios; Vourkas, Ioannis; Abustelema, Angel; Sirakoulis, Georgios; Rubio Sola, Jose Antonio (2017-04-01)
      Article
      Open Access
      The use of memristors and resistive random access memory (ReRAM) technology to perform logic computations, has drawn considerable attention from researchers in recent years. However, the topological aspects of the ...
    • Design and simulation of peripheral driving circuitry for computational ReRAM 

      Fernández López, Cristina; Vourkas, Ioannis; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2022)
      Conference report
      Open Access
      As an alternative approach to the von Neumann architecture, the notion of computational resistive random- access memory (ReRAM) has emerged, promising faster and more energy-efficient computing systems. In this context, ...
    • Effective current-driven memory operations for low-power ReRAM applications 

      Cirera Hernandez, Albert; Garrido Fernández, Blas; Rubio Sola, Jose Antonio; Vourkas, Ioannis (Institute of Electrical and Electronics Engineers (IEEE), 2023-05-13)
      Article
      Open Access
      Resistive switching (RS) devices are electronic components which exhibit a resistive state that can be adjusted to different nonvolatile levels via electrical stressing, fueling the development of future resistive memories ...
    • Experience on material implication computing with an electromechanical memristor emulator 

      Rubio Sola, Jose Antonio; Moll Echeto, Francisco de Borja; Escudero López, Manuel; Zuin, Stefano; Vourkas, Ioannis; Sirakoulis, Georgios (IEEE Press, 2016)
      Conference report
      Open Access
      Memristors are being considered as a promising emerging device able to introduce new paradigms in both data storage and computing. In this paper the authors introduce the concept of a quasi-ideal experimental device that ...
    • Experimental study of artificial neural networks using a digital memristor simulator 

      Ntinas, Vasileios; Vourkas, Ioannis; Abusleme, Angel; Sirakoulis, Georgios; Rubio Sola, Jose Antonio (2018-02-01)
      Article
      Open Access
      This paper presents a fully digital implementation of a memristor hardware simulator, as the core of an emulator, based on a behavioral model of voltage-controlled threshold-type bipolar memristors. Compared to other analog ...
    • Exploring different circuit-level approaches to the forming of resistive random access memories 

      Cirera, Albert; Fernandez, Carlos; Vourkas, Ioannis; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2022)
      Conference report
      Restricted access - publisher's policy
      Advances in emerging resistive random-access memory (ReRAM) technology show promise to be used in future memory-centric computing systems. In ReRAM arrays that consist of two-terminal bipolar resistive switching (RS) ...
    • Exploring the voltage divider approach for accurate memristor state tuning 

      Vourkas, Ioannis; Gomez, Jorge; Abusleme, Angel; Vasileiadis, Nikolaos; Sirakoulis, Georgios; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017)
      Conference report
      Restricted access - publisher's policy
      The maximum exploitation of the favorable properties and the analog nature of memristor technology in future nonvolatile resistive memories, requires accurate multilevel programming. In this direction, we explore the voltage ...
    • Exploring the “resistance change per energy unit” as universal performance parameter for resistive switching devices 

      Gómez Mir, Jorge Tomás; Vourkas, Ioannis; Abusleme, Angel; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat; Rubio Sola, Jose Antonio (2020-03-01)
      Article
      Open Access
      Resistive switching (RS) device (memristor) technology is continuously maturing towards industrial establishment. There are RS devices that demonstrate an “incremental” (analog) switching behavior, whereas others change ...
    • Memristive cellular automata for modeling of epileptic brain activity 

      Karamani, Rafallia; Fyrigos, Iosif; Ntinas, Vasileios; Vourkas, Ioannis; Sirakoulis, Georgios Ch.; Rubio Sola, Jose Antonio (2018)
      Conference report
      Open Access
      Cellular Automata (CA) is a nature-inspired and widespread computational model which is based on the collective and emergent parallel computing capability of units (cells) locally interconnected in an abstract brain-like ...
    • Memristive logic in crossbar memory arrays: Variability-aware design for higher reliability 

      Escudero López, Manuel; Vourkas, Ioannis; Rubio Sola, Jose Antonio; Moll Echeto, Francisco de Borja (2019-01-01)
      Article
      Open Access
      The advent of the first TiO 2 -based memristor in 2008 revived the scientific interest both from academia and industry for this device technology and has so far led to several emerging applications including logic and ...
    • On the development of prognostics and system health management (PHM) techniques for ReRAM applications 

      Cayo, Jose; Melivilu, Matias; Rubio Sola, Jose Antonio; Vourkas, Ioannis (Institute of Electrical and Electronics Engineers (IEEE), 2023)
      Conference report
      Open Access
      The resistive switching (RS) technology has many promising applications, but the inherent variability of RS devices has been an important obstacle for the progress towards mass production. Nonidealities of device switching ...
    • On the variability-aware design of memristor-based logic circuits 

      Escudero López, Manuel; Vourkas, Ioannis; Rubio Sola, Jose Antonio; Moll Echeto, Francisco de Borja (Institute of Electrical and Electronics Engineers (IEEE), 2018)
      Conference report
      Open Access
      Ever since the advent of the first TiO 2 -based memristor and the respective linear model published by Hewlett-Packard Labs, several behavioral models of memristors have been published. Such models capture the fundamental ...
    • Resistive switching behavior seen from the energy point of view 

      Gómez Mir, Jorge Tomás; Abusleme Hoffman, Angel; Vourkas, Ioannis; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2018)
      Conference report
      Open Access
      The technology of Resistive Switching (RS) devices (memristors) is continuously maturing on its way towards viable commercial establishment. So far, the change of resistance has been identified as a function of the applied ...