Browsing by Author "Vidal Fuentes, Pedro"

Now showing items 1-5 of 5

    • Challenges and improvement pathways to develop quasi-1D (Sb1-xBix)2Se3-based materials for optically tuneable photovoltaic applications. Towards chalcogenide narrow-bandgap devices 

      Caño Prades, Ivan; Vidal Fuentes, Pedro; Gon Medaille, Axel; Jehl, Zacharie Victor Samuel Na; Jiménez Arguijo, Alex; Guc, Maxim; Izquierdo Roca, Víctor; Malerba, Claudia; Valentini, Matteo; Jiménez Guerra, Maykel; Placidi, Marcel Jose; Puigdollers i González, Joaquim; Saucedo Silva, Edgardo Ademar (2023-03-01)
      Article
      Open Access
      Quasi-1D chalcogenides have shown great promises in the development of emerging photovoltaic technologies. However, most quasi-1D semiconductors other than Sb2Se3 and Sb2S3 have been seldom investigated for energy generation ...

    • Controlling the anionic ratio and gradient in kesterite technology 

      Andrade Arvizu, Jacob; Fonoll Rubio, Robert; Izquierdo Roca, Víctor; Becerril Romero, Ignacio; Sylla, Dioulde Huguette; Vidal Fuentes, Pedro; Jehl Li-Kao, Zacharie; Thomere, Angélica; Giraldo, Sergio; Tiwari, Kunal; Resalati, Shahaboddin; Guc, Maxim; Placidi, Marcel Jose (2022-01-03)
      Article
      Open Access
      Accurate anionic control during the formation of chalcogenide solid solutions is fundamental for tuning the physicochemical properties of this class of materials. Compositional grading is the key aspect of band gap engineering ...

    • Does Sb2Se3 admit nonstoichiometric conditions? How modifying the overall se content affects the structural, optical, and optoelectronic properties of Sb2Se3 thin films 

      Caño Prades, Ivan; Vidal Fuentes, Pedro; Calvo Barrio, Lorenzo; Alcobé Olle, Xavier; Giraldo, Sergio; Sánchez González, Yudania; Jehl Li-Kao, Zacharie; Placidi, Marcel Jose; Puigdollers i González, Joaquim; Izquierdo Roca, Víctor; Saucedo Silva, Edgardo Ademar; Asensi López, José Miguel (2022-03-09)
      Article
      Open Access
      Sb2Se3 is a quasi-one-dimensional (1D) semiconductor, which has shown great promise in photovoltaics. However, its performance is currently limited by a high Voc deficit. Therefore, it is necessary to explore new strategies ...

    • Insights on the limiting factors of Cu2ZnGeSe4 based solar cells 

      Anefnaf, Ikram; Aazou, Safae; Vidal Fuentes, Pedro; Fonoll Rubio, Robert; Tiwari, Ashish Kumar; Jehl Li-Kao, Zacharie; Guc, Maxim; Saucedo Silva, Edgardo Ademar; Sekkat, Zouheir (2021-08-01)
      Article
      Restricted access - publisher's policy
      Germanium-based wide band gap kesterite semiconductor Cu2ZnGe(S,Se)4 (CZGeSSe) is considered a very promising absorber compound as top cell in tandem devices. Autonomy to tailor the band gap from ~1.47 eV (Cu2ZnGeSe4-CZGeSe) ...

    • Insights on the thermal stability of the Sb2Se3 quasi-1D photovoltaic technology 

      Vidal Fuentes, Pedro; Guc, Maxim; Becerril Romero, Ignacio; Sylla, Dioulde Huguette; Alcobé Olle, Xavier; Sánchez González, Yudania; Pérez Rodríguez, Alejandro; Saucedo Silva, Edgardo Ademar; Izquierdo Roca, Víctor (Wiley, 2021-10-13)
      Article
      Open Access
      This work explores the thermal stability of antimony-based photovoltaic (PV) technologies investigating the effect of low-temperature (50—350¿°C) postdeposition annealings (PDAs) on bare Sb2Se3 absorbers and complete ...